APA(7版)引用形式

Imbrici, P., Grottesi, A., D'Adamo, M., Mannucci, R., Tucker, S., & Pessia, M. (2009). Contribution of the central hydrophobic residue in the PXP motif of voltage-dependent K+ channels to S6 flexibility and gating properties.

Chicagoスタイル(17版)引用形式

Imbrici, P., A. Grottesi, M. D'Adamo, R. Mannucci, S. Tucker, , M. Pessia. Contribution of the Central Hydrophobic Residue in the PXP Motif of Voltage-dependent K+ Channels to S6 Flexibility and Gating Properties. 2009.

MLA(9版)引用形式

Imbrici, P., et al. Contribution of the Central Hydrophobic Residue in the PXP Motif of Voltage-dependent K+ Channels to S6 Flexibility and Gating Properties. 2009.