χ(3) nonlinear susceptibility in II-VI compounds and applications for squeezed light generation in semiconductors
We have measured the nonlinear refractive index near half-bandgap (Eg/2) in ZnS and ZnSe by self-phase modulation experiments. The ratio of the nonlinear phase shift and the total optical absorption losses is critically dependent on the detuning from Eg/2. Efficient quadrature squeezing was obtained...
Main Authors: | , , , , |
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Format: | Journal article |
Language: | English |
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1996
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author | Fox, A Dabbicco, M Baumberg, J Huttner, B Ryan, J |
author_facet | Fox, A Dabbicco, M Baumberg, J Huttner, B Ryan, J |
author_sort | Fox, A |
collection | OXFORD |
description | We have measured the nonlinear refractive index near half-bandgap (Eg/2) in ZnS and ZnSe by self-phase modulation experiments. The ratio of the nonlinear phase shift and the total optical absorption losses is critically dependent on the detuning from Eg/2. Efficient quadrature squeezing was obtained at a centre wavelength of 780 nm in ZnS and at 960 nm in ZnSe. The scheme we employed can generally be applied to semiconductors, and opens the way for squeezed light generation over a wide range of wavelengths. |
first_indexed | 2024-03-06T23:37:51Z |
format | Journal article |
id | oxford-uuid:6e470352-2ef6-4ec1-ad81-516526b0765a |
institution | University of Oxford |
language | English |
last_indexed | 2024-03-06T23:37:51Z |
publishDate | 1996 |
record_format | dspace |
spelling | oxford-uuid:6e470352-2ef6-4ec1-ad81-516526b0765a2022-03-26T19:23:21Zχ(3) nonlinear susceptibility in II-VI compounds and applications for squeezed light generation in semiconductorsJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:6e470352-2ef6-4ec1-ad81-516526b0765aEnglishSymplectic Elements at Oxford1996Fox, ADabbicco, MBaumberg, JHuttner, BRyan, JWe have measured the nonlinear refractive index near half-bandgap (Eg/2) in ZnS and ZnSe by self-phase modulation experiments. The ratio of the nonlinear phase shift and the total optical absorption losses is critically dependent on the detuning from Eg/2. Efficient quadrature squeezing was obtained at a centre wavelength of 780 nm in ZnS and at 960 nm in ZnSe. The scheme we employed can generally be applied to semiconductors, and opens the way for squeezed light generation over a wide range of wavelengths. |
spellingShingle | Fox, A Dabbicco, M Baumberg, J Huttner, B Ryan, J χ(3) nonlinear susceptibility in II-VI compounds and applications for squeezed light generation in semiconductors |
title | χ(3) nonlinear susceptibility in II-VI compounds and applications for squeezed light generation in semiconductors |
title_full | χ(3) nonlinear susceptibility in II-VI compounds and applications for squeezed light generation in semiconductors |
title_fullStr | χ(3) nonlinear susceptibility in II-VI compounds and applications for squeezed light generation in semiconductors |
title_full_unstemmed | χ(3) nonlinear susceptibility in II-VI compounds and applications for squeezed light generation in semiconductors |
title_short | χ(3) nonlinear susceptibility in II-VI compounds and applications for squeezed light generation in semiconductors |
title_sort | χ 3 nonlinear susceptibility in ii vi compounds and applications for squeezed light generation in semiconductors |
work_keys_str_mv | AT foxa ch3nonlinearsusceptibilityiniivicompoundsandapplicationsforsqueezedlightgenerationinsemiconductors AT dabbiccom ch3nonlinearsusceptibilityiniivicompoundsandapplicationsforsqueezedlightgenerationinsemiconductors AT baumbergj ch3nonlinearsusceptibilityiniivicompoundsandapplicationsforsqueezedlightgenerationinsemiconductors AT huttnerb ch3nonlinearsusceptibilityiniivicompoundsandapplicationsforsqueezedlightgenerationinsemiconductors AT ryanj ch3nonlinearsusceptibilityiniivicompoundsandapplicationsforsqueezedlightgenerationinsemiconductors |