In-situ observation of stacking fault evolution in vacuum-deposited C60
We report an in-situ study of stacking fault evolution in C 60 thin films using grazing-incidence x-ray scattering (GIXS). A Williamson-Hall analysis of the main scattering features during growth of a 15 nm film on glass indicate lattice strain as high as 6% in the first 5 nm of the film, with a dec...
| Main Authors: | , , , , |
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| Format: | Journal article |
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AIP Publishing
2017
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| _version_ | 1797074570280173568 |
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| author | Martinez Hardigree, J Ramirez, I Mazzotta, G Nicklin, C Riede, M |
| author_facet | Martinez Hardigree, J Ramirez, I Mazzotta, G Nicklin, C Riede, M |
| author_sort | Martinez Hardigree, J |
| collection | OXFORD |
| description | We report an in-situ study of stacking fault evolution in C 60 thin films using grazing-incidence x-ray scattering (GIXS). A Williamson-Hall analysis of the main scattering features during growth of a 15 nm film on glass indicate lattice strain as high as 6% in the first 5 nm of the film, with a decrease to 2% beyond 8 nm thickness. Deformation stacking faults along the {220} plane are found to occur with 68% probability, and closely linked to the formation of a nanocrystalline powder-like film. Our findings, which capture monolayer-resolution growth, are consistent with previous work on crystalline and powder C60 films and provide a crystallographic context for the realtime study of organic semiconductor thin films. |
| first_indexed | 2024-03-06T23:38:07Z |
| format | Journal article |
| id | oxford-uuid:6e5d65db-3f5c-4dd2-998d-30985a3e7d72 |
| institution | University of Oxford |
| last_indexed | 2024-03-06T23:38:07Z |
| publishDate | 2017 |
| publisher | AIP Publishing |
| record_format | dspace |
| spelling | oxford-uuid:6e5d65db-3f5c-4dd2-998d-30985a3e7d722022-03-26T19:24:02ZIn-situ observation of stacking fault evolution in vacuum-deposited C60Journal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:6e5d65db-3f5c-4dd2-998d-30985a3e7d72Symplectic Elements at OxfordAIP Publishing2017Martinez Hardigree, JRamirez, IMazzotta, GNicklin, CRiede, MWe report an in-situ study of stacking fault evolution in C 60 thin films using grazing-incidence x-ray scattering (GIXS). A Williamson-Hall analysis of the main scattering features during growth of a 15 nm film on glass indicate lattice strain as high as 6% in the first 5 nm of the film, with a decrease to 2% beyond 8 nm thickness. Deformation stacking faults along the {220} plane are found to occur with 68% probability, and closely linked to the formation of a nanocrystalline powder-like film. Our findings, which capture monolayer-resolution growth, are consistent with previous work on crystalline and powder C60 films and provide a crystallographic context for the realtime study of organic semiconductor thin films. |
| spellingShingle | Martinez Hardigree, J Ramirez, I Mazzotta, G Nicklin, C Riede, M In-situ observation of stacking fault evolution in vacuum-deposited C60 |
| title | In-situ observation of stacking fault evolution in vacuum-deposited C60 |
| title_full | In-situ observation of stacking fault evolution in vacuum-deposited C60 |
| title_fullStr | In-situ observation of stacking fault evolution in vacuum-deposited C60 |
| title_full_unstemmed | In-situ observation of stacking fault evolution in vacuum-deposited C60 |
| title_short | In-situ observation of stacking fault evolution in vacuum-deposited C60 |
| title_sort | in situ observation of stacking fault evolution in vacuum deposited c60 |
| work_keys_str_mv | AT martinezhardigreej insituobservationofstackingfaultevolutioninvacuumdepositedc60 AT ramirezi insituobservationofstackingfaultevolutioninvacuumdepositedc60 AT mazzottag insituobservationofstackingfaultevolutioninvacuumdepositedc60 AT nicklinc insituobservationofstackingfaultevolutioninvacuumdepositedc60 AT riedem insituobservationofstackingfaultevolutioninvacuumdepositedc60 |