Interaction of organo-sulfur compounds with CVD diamond surfaces
The interaction of diethylsulfide (DES) with atomically clean diamond surfaces prepared by chemical vapour deposition (CVD) has been studied, in order to gain chemical insight into the use of this compound as a precursor for sulfur deposition and on the chemistry of sulfur at diamond surfaces. DES i...
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| Format: | Conference item |
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Elsevier
2000
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| _version_ | 1797075034548731904 |
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| author | Baral, B Pang, L Jackman, R Foord, J |
| author_facet | Baral, B Pang, L Jackman, R Foord, J |
| author_sort | Baral, B |
| collection | OXFORD |
| description | The interaction of diethylsulfide (DES) with atomically clean diamond surfaces prepared by chemical vapour deposition (CVD) has been studied, in order to gain chemical insight into the use of this compound as a precursor for sulfur deposition and on the chemistry of sulfur at diamond surfaces. DES is found to display a negligible reactive sticking probability on diamond in the temperature range from room temperature to 900 °C. When thermally activated using a hot filament, the efficient deposition of both sulfur and hydrocarbon species is observed. Very facile diffusion of sulfur away from the surface into the bulk of the film is seen at comparatively low temperatures (approximately 500 °C), suggesting that this is associated with diffusion via grain boundaries. |
| first_indexed | 2024-03-06T23:44:42Z |
| format | Conference item |
| id | oxford-uuid:707f0488-7a96-40ac-a379-7ccc8cd4ef7a |
| institution | University of Oxford |
| last_indexed | 2024-03-06T23:44:42Z |
| publishDate | 2000 |
| publisher | Elsevier |
| record_format | dspace |
| spelling | oxford-uuid:707f0488-7a96-40ac-a379-7ccc8cd4ef7a2022-03-26T19:37:31ZInteraction of organo-sulfur compounds with CVD diamond surfacesConference itemhttp://purl.org/coar/resource_type/c_5794uuid:707f0488-7a96-40ac-a379-7ccc8cd4ef7aSymplectic Elements at OxfordElsevier2000Baral, BPang, LJackman, RFoord, JThe interaction of diethylsulfide (DES) with atomically clean diamond surfaces prepared by chemical vapour deposition (CVD) has been studied, in order to gain chemical insight into the use of this compound as a precursor for sulfur deposition and on the chemistry of sulfur at diamond surfaces. DES is found to display a negligible reactive sticking probability on diamond in the temperature range from room temperature to 900 °C. When thermally activated using a hot filament, the efficient deposition of both sulfur and hydrocarbon species is observed. Very facile diffusion of sulfur away from the surface into the bulk of the film is seen at comparatively low temperatures (approximately 500 °C), suggesting that this is associated with diffusion via grain boundaries. |
| spellingShingle | Baral, B Pang, L Jackman, R Foord, J Interaction of organo-sulfur compounds with CVD diamond surfaces |
| title | Interaction of organo-sulfur compounds with CVD diamond surfaces |
| title_full | Interaction of organo-sulfur compounds with CVD diamond surfaces |
| title_fullStr | Interaction of organo-sulfur compounds with CVD diamond surfaces |
| title_full_unstemmed | Interaction of organo-sulfur compounds with CVD diamond surfaces |
| title_short | Interaction of organo-sulfur compounds with CVD diamond surfaces |
| title_sort | interaction of organo sulfur compounds with cvd diamond surfaces |
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