Long wavelength photoresponse of short period InAs/GaSb superlattices
We have performed interband photoconductivity experiments at 2 K on a series of superlattices with different layer thicknesses. We show that the band gap is indeed tunable and measure values ranging from 5 to 20 mu m for the first time on samples grown by metal-organic vapour phase epitaxy. An 8 ban...
| Egile Nagusiak: | , , , , |
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| Formatua: | Conference item |
| Argitaratua: |
1995
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| Gaia: | We have performed interband photoconductivity experiments at 2 K on a series of superlattices with different layer thicknesses. We show that the band gap is indeed tunable and measure values ranging from 5 to 20 mu m for the first time on samples grown by metal-organic vapour phase epitaxy. An 8 band k.p calculation is used to estimate the band gap and also to fit the interband Landau level transitions throughout the semiconducting layer thicknesses range. |
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