Long wavelength photoresponse of short period InAs/GaSb superlattices
We have performed interband photoconductivity experiments at 2 K on a series of superlattices with different layer thicknesses. We show that the band gap is indeed tunable and measure values ranging from 5 to 20 mu m for the first time on samples grown by metal-organic vapour phase epitaxy. An 8 ban...
| 主要な著者: | , , , , |
|---|---|
| フォーマット: | Conference item |
| 出版事項: |
1995
|
| 要約: | We have performed interband photoconductivity experiments at 2 K on a series of superlattices with different layer thicknesses. We show that the band gap is indeed tunable and measure values ranging from 5 to 20 mu m for the first time on samples grown by metal-organic vapour phase epitaxy. An 8 band k.p calculation is used to estimate the band gap and also to fit the interband Landau level transitions throughout the semiconducting layer thicknesses range. |
|---|