| Streszczenie: | We compare the switching losses of four equivalent
silicon and wide-bandgap 650V power transistors operated in
a hard-switched half-bridge configuration, switching 400V at
40A. Each transistor is mounted on an identical PCB and
driven by a gate drive circuit matched to its requirements.
Switching speed is maximised by a PCB design featuring very low
parasitic inductance and the use of zero external gate resistance
(where possible). Switching losses are measured electrically using
a Double Pulse Test (DPT) method. However, high-bandwidth
electrical measurements are prone to error and so we assess the
gain accuracy, offset accuracy, and the bandwidth requirements
of the DPT measurements, and then verify the DPT results by
calorimetry. The electrical and calorimetric measurements are
shown to agree to within 5%. Comprehensive plots of gate-source
voltage, drain-source voltage, and source current are provided
for all transistors over a junction temperature range of 50-150°C.
The ratio of the total half-bridge switching losses is 1:3.2:14:31
for the GaN HEMT, SiC MOSFET, Si IGBT, and Si superjunction
MOSFET, respectively.
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