A comparison of the hard-switching performance of 650V power transistors with calorimetric verification

We compare the switching losses of four equivalent silicon and wide-bandgap 650V power transistors operated in a hard-switched half-bridge configuration, switching 400V at 40A. Each transistor is mounted on an identical PCB and driven by a gate drive circuit matched to its requirements. Switching sp...

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Opis bibliograficzny
Główni autorzy: Rogers, DJ, Bruford, J, Ristic-Smith, A, Ali, K, Palmer, P, Shelton, E
Format: Journal article
Język:English
Wydane: IEEE 2023
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author Rogers, DJ
Bruford, J
Ristic-Smith, A
Ali, K
Palmer, P
Shelton, E
author_facet Rogers, DJ
Bruford, J
Ristic-Smith, A
Ali, K
Palmer, P
Shelton, E
author_sort Rogers, DJ
collection OXFORD
description We compare the switching losses of four equivalent silicon and wide-bandgap 650V power transistors operated in a hard-switched half-bridge configuration, switching 400V at 40A. Each transistor is mounted on an identical PCB and driven by a gate drive circuit matched to its requirements. Switching speed is maximised by a PCB design featuring very low parasitic inductance and the use of zero external gate resistance (where possible). Switching losses are measured electrically using a Double Pulse Test (DPT) method. However, high-bandwidth electrical measurements are prone to error and so we assess the gain accuracy, offset accuracy, and the bandwidth requirements of the DPT measurements, and then verify the DPT results by calorimetry. The electrical and calorimetric measurements are shown to agree to within 5%. Comprehensive plots of gate-source voltage, drain-source voltage, and source current are provided for all transistors over a junction temperature range of 50-150°C. The ratio of the total half-bridge switching losses is 1:3.2:14:31 for the GaN HEMT, SiC MOSFET, Si IGBT, and Si superjunction MOSFET, respectively.
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spelling oxford-uuid:70e576e5-af2f-4d0b-a4dd-7ab8ebb84b882024-03-07T09:45:58ZA comparison of the hard-switching performance of 650V power transistors with calorimetric verificationJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:70e576e5-af2f-4d0b-a4dd-7ab8ebb84b88EnglishSymplectic ElementsIEEE2023Rogers, DJBruford, JRistic-Smith, AAli, KPalmer, PShelton, EWe compare the switching losses of four equivalent silicon and wide-bandgap 650V power transistors operated in a hard-switched half-bridge configuration, switching 400V at 40A. Each transistor is mounted on an identical PCB and driven by a gate drive circuit matched to its requirements. Switching speed is maximised by a PCB design featuring very low parasitic inductance and the use of zero external gate resistance (where possible). Switching losses are measured electrically using a Double Pulse Test (DPT) method. However, high-bandwidth electrical measurements are prone to error and so we assess the gain accuracy, offset accuracy, and the bandwidth requirements of the DPT measurements, and then verify the DPT results by calorimetry. The electrical and calorimetric measurements are shown to agree to within 5%. Comprehensive plots of gate-source voltage, drain-source voltage, and source current are provided for all transistors over a junction temperature range of 50-150°C. The ratio of the total half-bridge switching losses is 1:3.2:14:31 for the GaN HEMT, SiC MOSFET, Si IGBT, and Si superjunction MOSFET, respectively.
spellingShingle Rogers, DJ
Bruford, J
Ristic-Smith, A
Ali, K
Palmer, P
Shelton, E
A comparison of the hard-switching performance of 650V power transistors with calorimetric verification
title A comparison of the hard-switching performance of 650V power transistors with calorimetric verification
title_full A comparison of the hard-switching performance of 650V power transistors with calorimetric verification
title_fullStr A comparison of the hard-switching performance of 650V power transistors with calorimetric verification
title_full_unstemmed A comparison of the hard-switching performance of 650V power transistors with calorimetric verification
title_short A comparison of the hard-switching performance of 650V power transistors with calorimetric verification
title_sort comparison of the hard switching performance of 650v power transistors with calorimetric verification
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