A comparison of the hard-switching performance of 650V power transistors with calorimetric verification
We compare the switching losses of four equivalent silicon and wide-bandgap 650V power transistors operated in a hard-switched half-bridge configuration, switching 400V at 40A. Each transistor is mounted on an identical PCB and driven by a gate drive circuit matched to its requirements. Switching sp...
| Главные авторы: | , , , , , |
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| Формат: | Journal article |
| Язык: | English |
| Опубликовано: |
IEEE
2023
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