Nitrogen in silicon: Transport and mechanical properties
A novel dislocation locking technique is applied to nitrogen-doped float-zone silicon. Specimens containing well-defined arrays of dislocation half-loops are subjected to isothermal anneals of controlled duration, during which nitrogen diffuses to the dislocations. The stress required to bring about...
| Những tác giả chính: | , , , , , |
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| Định dạng: | Conference item |
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2006
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