The transmission electron microscopy investigation and electrical properties of epitaxial Tl-1223 and Bi-substituted T1-1223 thin films grown by in-situ laser ablation
Tl1Ba2Ca2Cu3Ox thin films, with and without Bi-substitution, have been fabricated by in-situ laser ablation on (001) SrTiO3 and (001) LaAlO3 substrates. Using transmission electron microscopy and allied techniques, the films have been characterised in cross-section. In the case of films grown withou...
| المؤلفون الرئيسيون: | , , , , , , , , |
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| التنسيق: | Journal article |
| اللغة: | English |
| منشور في: |
1998
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| _version_ | 1826279128918130688 |
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| author | O'Connor, J Dew-Hughes, D Reschauer, N Brozio, W Wagner, H Renk, K Goringe, M Grovenor, C Kaiser, T |
| author_facet | O'Connor, J Dew-Hughes, D Reschauer, N Brozio, W Wagner, H Renk, K Goringe, M Grovenor, C Kaiser, T |
| author_sort | O'Connor, J |
| collection | OXFORD |
| description | Tl1Ba2Ca2Cu3Ox thin films, with and without Bi-substitution, have been fabricated by in-situ laser ablation on (001) SrTiO3 and (001) LaAlO3 substrates. Using transmission electron microscopy and allied techniques, the films have been characterised in cross-section. In the case of films grown without Bi-substitution, heavily defected microstructures with a-axis oriented grains and stacking-type planar defects resulting in discontinuous a-b planes have been observed. Films fabricated with Bi-substitution have highly defected micro structure s within about 150 nm of the substrate, with considerably less faulting further from the substrate where the bulk of the superconducting currents flow and the microwave properties are primarily determined. Bi-substituted films have been fabricated with critical current density values up to 8 X 105 A cm-2 (77 K) and surface resistances values as low as 56 mΩ (77 K, 87 GHz), which is equivalent to 0.74 mΩ at 10 GHz, assuming a frequency-squared relationship. © 1998 Elsevier Science B.V. All rights reserved. |
| first_indexed | 2024-03-06T23:54:11Z |
| format | Journal article |
| id | oxford-uuid:73a24acf-0e69-4031-a2aa-dba84aa1a7a7 |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-06T23:54:11Z |
| publishDate | 1998 |
| record_format | dspace |
| spelling | oxford-uuid:73a24acf-0e69-4031-a2aa-dba84aa1a7a72022-03-26T19:57:42ZThe transmission electron microscopy investigation and electrical properties of epitaxial Tl-1223 and Bi-substituted T1-1223 thin films grown by in-situ laser ablationJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:73a24acf-0e69-4031-a2aa-dba84aa1a7a7EnglishSymplectic Elements at Oxford1998O'Connor, JDew-Hughes, DReschauer, NBrozio, WWagner, HRenk, KGoringe, MGrovenor, CKaiser, TTl1Ba2Ca2Cu3Ox thin films, with and without Bi-substitution, have been fabricated by in-situ laser ablation on (001) SrTiO3 and (001) LaAlO3 substrates. Using transmission electron microscopy and allied techniques, the films have been characterised in cross-section. In the case of films grown without Bi-substitution, heavily defected microstructures with a-axis oriented grains and stacking-type planar defects resulting in discontinuous a-b planes have been observed. Films fabricated with Bi-substitution have highly defected micro structure s within about 150 nm of the substrate, with considerably less faulting further from the substrate where the bulk of the superconducting currents flow and the microwave properties are primarily determined. Bi-substituted films have been fabricated with critical current density values up to 8 X 105 A cm-2 (77 K) and surface resistances values as low as 56 mΩ (77 K, 87 GHz), which is equivalent to 0.74 mΩ at 10 GHz, assuming a frequency-squared relationship. © 1998 Elsevier Science B.V. All rights reserved. |
| spellingShingle | O'Connor, J Dew-Hughes, D Reschauer, N Brozio, W Wagner, H Renk, K Goringe, M Grovenor, C Kaiser, T The transmission electron microscopy investigation and electrical properties of epitaxial Tl-1223 and Bi-substituted T1-1223 thin films grown by in-situ laser ablation |
| title | The transmission electron microscopy investigation and electrical properties of epitaxial Tl-1223 and Bi-substituted T1-1223 thin films grown by in-situ laser ablation |
| title_full | The transmission electron microscopy investigation and electrical properties of epitaxial Tl-1223 and Bi-substituted T1-1223 thin films grown by in-situ laser ablation |
| title_fullStr | The transmission electron microscopy investigation and electrical properties of epitaxial Tl-1223 and Bi-substituted T1-1223 thin films grown by in-situ laser ablation |
| title_full_unstemmed | The transmission electron microscopy investigation and electrical properties of epitaxial Tl-1223 and Bi-substituted T1-1223 thin films grown by in-situ laser ablation |
| title_short | The transmission electron microscopy investigation and electrical properties of epitaxial Tl-1223 and Bi-substituted T1-1223 thin films grown by in-situ laser ablation |
| title_sort | transmission electron microscopy investigation and electrical properties of epitaxial tl 1223 and bi substituted t1 1223 thin films grown by in situ laser ablation |
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