Large-area plastic nanogap electronics enabled by adhesion lithography
Large-area manufacturing of flexible nanoscale electronics has long been sought by the printed electronics industry. However, the lack of a robust, reliable, high throughput and low-cost technique that is capable of delivering high-performance functional devices has hitherto hindered commercial expl...
| Main Authors: | , , , , , , , , , , |
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| Format: | Journal article |
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Nature Publishing Group
2018
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| _version_ | 1797075745616429056 |
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| author | Semple, J Georgiadou, D Wyatt-Moon, G Yoon, M Seitkhan, A Yengel, E Rossbauer, S Bottacchi, F McLachlan, M Bradley, D Anthopoulos, T |
| author_facet | Semple, J Georgiadou, D Wyatt-Moon, G Yoon, M Seitkhan, A Yengel, E Rossbauer, S Bottacchi, F McLachlan, M Bradley, D Anthopoulos, T |
| author_sort | Semple, J |
| collection | OXFORD |
| description | Large-area manufacturing of flexible nanoscale electronics has long been sought by the printed electronics industry. However, the lack of a robust, reliable, high throughput and low-cost technique that is capable of delivering high-performance functional devices has hitherto hindered commercial exploitation. Herein we report on the extensive range of capabilities presented by adhesion lithography (a-Lith), an innovative patterning technique for the fabrication of coplanar nanogap electrodes with arbitrarily large aspect ratio. We use this technique to fabricate a plethora of nanoscale electronic devices based on symmetric and asymmetric coplanar electrodes separated by a nanogap ≺ 15 nm. We show that functional devices including self-aligned-gate transistors, radio frequency diodes and rectifying circuits, multi-colour organic light-emitting nanodiodes and multilevel non-volatile memory devices, can be fabricated in a facile manner with minimum process complexity on a range of substrates. The compatibility of the formed nanogap electrodes with a wide range of solution processable semiconductors and substrate materials renders a-Lith highly attractive for the manufacturing of large-area nanoscale opto/electronics on arbitrary size and shape substrates. |
| first_indexed | 2024-03-06T23:54:33Z |
| format | Journal article |
| id | oxford-uuid:73bfa315-3c8d-4af8-bd8e-84f51ea82292 |
| institution | University of Oxford |
| last_indexed | 2024-03-06T23:54:33Z |
| publishDate | 2018 |
| publisher | Nature Publishing Group |
| record_format | dspace |
| spelling | oxford-uuid:73bfa315-3c8d-4af8-bd8e-84f51ea822922022-03-26T19:58:28ZLarge-area plastic nanogap electronics enabled by adhesion lithographyJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:73bfa315-3c8d-4af8-bd8e-84f51ea82292Symplectic Elements at OxfordNature Publishing Group2018Semple, JGeorgiadou, DWyatt-Moon, GYoon, MSeitkhan, AYengel, ERossbauer, SBottacchi, FMcLachlan, MBradley, DAnthopoulos, TLarge-area manufacturing of flexible nanoscale electronics has long been sought by the printed electronics industry. However, the lack of a robust, reliable, high throughput and low-cost technique that is capable of delivering high-performance functional devices has hitherto hindered commercial exploitation. Herein we report on the extensive range of capabilities presented by adhesion lithography (a-Lith), an innovative patterning technique for the fabrication of coplanar nanogap electrodes with arbitrarily large aspect ratio. We use this technique to fabricate a plethora of nanoscale electronic devices based on symmetric and asymmetric coplanar electrodes separated by a nanogap ≺ 15 nm. We show that functional devices including self-aligned-gate transistors, radio frequency diodes and rectifying circuits, multi-colour organic light-emitting nanodiodes and multilevel non-volatile memory devices, can be fabricated in a facile manner with minimum process complexity on a range of substrates. The compatibility of the formed nanogap electrodes with a wide range of solution processable semiconductors and substrate materials renders a-Lith highly attractive for the manufacturing of large-area nanoscale opto/electronics on arbitrary size and shape substrates. |
| spellingShingle | Semple, J Georgiadou, D Wyatt-Moon, G Yoon, M Seitkhan, A Yengel, E Rossbauer, S Bottacchi, F McLachlan, M Bradley, D Anthopoulos, T Large-area plastic nanogap electronics enabled by adhesion lithography |
| title | Large-area plastic nanogap electronics enabled by adhesion lithography |
| title_full | Large-area plastic nanogap electronics enabled by adhesion lithography |
| title_fullStr | Large-area plastic nanogap electronics enabled by adhesion lithography |
| title_full_unstemmed | Large-area plastic nanogap electronics enabled by adhesion lithography |
| title_short | Large-area plastic nanogap electronics enabled by adhesion lithography |
| title_sort | large area plastic nanogap electronics enabled by adhesion lithography |
| work_keys_str_mv | AT semplej largeareaplasticnanogapelectronicsenabledbyadhesionlithography AT georgiadoud largeareaplasticnanogapelectronicsenabledbyadhesionlithography AT wyattmoong largeareaplasticnanogapelectronicsenabledbyadhesionlithography AT yoonm largeareaplasticnanogapelectronicsenabledbyadhesionlithography AT seitkhana largeareaplasticnanogapelectronicsenabledbyadhesionlithography AT yengele largeareaplasticnanogapelectronicsenabledbyadhesionlithography AT rossbauers largeareaplasticnanogapelectronicsenabledbyadhesionlithography AT bottacchif largeareaplasticnanogapelectronicsenabledbyadhesionlithography AT mclachlanm largeareaplasticnanogapelectronicsenabledbyadhesionlithography AT bradleyd largeareaplasticnanogapelectronicsenabledbyadhesionlithography AT anthopoulost largeareaplasticnanogapelectronicsenabledbyadhesionlithography |