Metal-insulator oscillations in a two-dimensional electron-hole system

The electrical transport properties of a bipolar InAs/GaSb system have been studied in a magnetic field. The resistivity oscillates between insulating and metallic behavior while the quantum Hall effect shows a digital character oscillating from 0 to 1 conductance quantum e(2)/h. The insulating beha...

תיאור מלא

מידע ביבליוגרפי
Main Authors: Nicholas, R, Takashina, K, Lakrimi, M, Kardynal, B, Khym, S, Mason, N, Symons, D, Maude, D, Portal, J
פורמט: Journal article
שפה:English
יצא לאור: 2000
תיאור
סיכום:The electrical transport properties of a bipolar InAs/GaSb system have been studied in a magnetic field. The resistivity oscillates between insulating and metallic behavior while the quantum Hall effect shows a digital character oscillating from 0 to 1 conductance quantum e(2)/h. The insulating behavior is attributed to the formation of a total energy gap in the system. A novel looped edge state picture is proposed associated with the appearance of a voltage between Hall probes which is symmetric on magnetic field reversal.