A high-yield vacuum-evaporation-based R2R-compatible fabrication route for organic electronic circuits
Advances are described in a vacuum-evaporation-based approach for the roll-to-roll (R2R) production of organic thin film transistors (TFTs) and circuits. Results from 90-transistor arrays formed directly onto a plasma-polymerised diacrylate gate dielectric are compared with those formed on polystyre...
| Asıl Yazarlar: | , , , , , , , |
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| Materyal Türü: | Journal article |
| Dil: | English |
| Baskı/Yayın Bilgisi: |
Elsevier
2014
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| _version_ | 1826279254602547200 |
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| author | Patchett, E Williams, A Ding, Z Abbas, G Assender, H Morrison, J Yeates, S Taylor, D |
| author_facet | Patchett, E Williams, A Ding, Z Abbas, G Assender, H Morrison, J Yeates, S Taylor, D |
| author_sort | Patchett, E |
| collection | OXFORD |
| description | Advances are described in a vacuum-evaporation-based approach for the roll-to-roll (R2R) production of organic thin film transistors (TFTs) and circuits. Results from 90-transistor arrays formed directly onto a plasma-polymerised diacrylate gate dielectric are compared with those formed on polystyrene-buffered diacrylate. The latter approach resulted in stable, reproducible transistors with yields in excess of 90%. The resulting TFTs had low turn-on voltage, on-off ratios ∼106 and mobility ∼1 cm2/V s in the linear regime, as expected for dinaphtho[2,3-b: 2′,3′-f] thieno[3,2-b]thiophene the air stable small molecule used as the active semiconductor. We show that when device design is constrained by the generally poor registration ability of R2R processes, parasitic source-drain currents can lead to a >50% increase in the mobility extracted from the resulting TFTs, the increases being especially marked in low channel width devices. Batches of 27 saturated-load inverters were fabricated with 100% yield and their behaviour successfully reproduced using TFT parameters extracted with Silvaco's UOTFT Model. 5- and 7-stage ring oscillator (RO) outputs ranged from ∼120 Hz to >2 kHz with rail voltages, VDD, increasing from -15 V to -90 V. From simulations an order of magnitude increase in frequency could be expected by reducing parasitic gate capacitances. During 8 h of continuous operation at VDD = -60 V, the frequency of a 7-stage RO remained almost constant at ∼1.4 kHz albeit that the output signal amplitude decreased from ∼22 V to ∼10 V. Over the next 30 days of intermittent operation further degradation in performance occurred although an unused RO showed no deterioration over the same period. © 2014 The Authors. Published by Elsevier B.V. |
| first_indexed | 2024-03-06T23:56:00Z |
| format | Journal article |
| id | oxford-uuid:743db468-0c69-4f02-8dc0-11c49dea247b |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-06T23:56:00Z |
| publishDate | 2014 |
| publisher | Elsevier |
| record_format | dspace |
| spelling | oxford-uuid:743db468-0c69-4f02-8dc0-11c49dea247b2022-03-26T20:01:29ZA high-yield vacuum-evaporation-based R2R-compatible fabrication route for organic electronic circuitsJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:743db468-0c69-4f02-8dc0-11c49dea247bEnglishSymplectic Elements at OxfordElsevier2014Patchett, EWilliams, ADing, ZAbbas, GAssender, HMorrison, JYeates, STaylor, DAdvances are described in a vacuum-evaporation-based approach for the roll-to-roll (R2R) production of organic thin film transistors (TFTs) and circuits. Results from 90-transistor arrays formed directly onto a plasma-polymerised diacrylate gate dielectric are compared with those formed on polystyrene-buffered diacrylate. The latter approach resulted in stable, reproducible transistors with yields in excess of 90%. The resulting TFTs had low turn-on voltage, on-off ratios ∼106 and mobility ∼1 cm2/V s in the linear regime, as expected for dinaphtho[2,3-b: 2′,3′-f] thieno[3,2-b]thiophene the air stable small molecule used as the active semiconductor. We show that when device design is constrained by the generally poor registration ability of R2R processes, parasitic source-drain currents can lead to a >50% increase in the mobility extracted from the resulting TFTs, the increases being especially marked in low channel width devices. Batches of 27 saturated-load inverters were fabricated with 100% yield and their behaviour successfully reproduced using TFT parameters extracted with Silvaco's UOTFT Model. 5- and 7-stage ring oscillator (RO) outputs ranged from ∼120 Hz to >2 kHz with rail voltages, VDD, increasing from -15 V to -90 V. From simulations an order of magnitude increase in frequency could be expected by reducing parasitic gate capacitances. During 8 h of continuous operation at VDD = -60 V, the frequency of a 7-stage RO remained almost constant at ∼1.4 kHz albeit that the output signal amplitude decreased from ∼22 V to ∼10 V. Over the next 30 days of intermittent operation further degradation in performance occurred although an unused RO showed no deterioration over the same period. © 2014 The Authors. Published by Elsevier B.V. |
| spellingShingle | Patchett, E Williams, A Ding, Z Abbas, G Assender, H Morrison, J Yeates, S Taylor, D A high-yield vacuum-evaporation-based R2R-compatible fabrication route for organic electronic circuits |
| title | A high-yield vacuum-evaporation-based R2R-compatible fabrication route for organic electronic circuits |
| title_full | A high-yield vacuum-evaporation-based R2R-compatible fabrication route for organic electronic circuits |
| title_fullStr | A high-yield vacuum-evaporation-based R2R-compatible fabrication route for organic electronic circuits |
| title_full_unstemmed | A high-yield vacuum-evaporation-based R2R-compatible fabrication route for organic electronic circuits |
| title_short | A high-yield vacuum-evaporation-based R2R-compatible fabrication route for organic electronic circuits |
| title_sort | high yield vacuum evaporation based r2r compatible fabrication route for organic electronic circuits |
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