OXIDATION AND THE STRUCTURE OF THE SILICON-OXIDE INTERFACE
We propose that, in the oxidation of silicon, a thin layer of a distinct 'reactive' oxide separates the silicon from the amorphous silica. This reactive layer is stabilized by stress generated with the underlying silicon during oxidation at the interface. Our hypothesis resolves some appar...
| Autores principales: | , , |
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| Formato: | Journal article |
| Lenguaje: | English |
| Publicado: |
1987
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