n-type doping in Cd2SnO4: a study by EELS and photoemission
The influence of n-type doping on the electronic structure of Cd2SnO4 has been studied by electron-energy-loss spectroscopy (EELS) and UV photoemission spectroscopy (UPS). In substitution on Cd sites or Sb substitution in Sn sites leads to the appearance of well-defined plasmon loss peaks in EELS, w...
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| Aineistotyyppi: | Journal article |
| Kieli: | English |
| Julkaistu: |
American Physical Society
1996
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| Aiheet: |
| Yhteenveto: | The influence of n-type doping on the electronic structure of Cd2SnO4 has been studied by electron-energy-loss spectroscopy (EELS) and UV photoemission spectroscopy (UPS). In substitution on Cd sites or Sb substitution in Sn sites leads to the appearance of well-defined plasmon loss peaks in EELS, with a maximum plasmon energy of just below 0.6 eV in Sb-doped material. A weak conduction-band feature is observed in UPS, the width of which is of the order expected from a simple free-electron model. |
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