n-type doping in Cd2SnO4: a study by EELS and photoemission
The influence of n-type doping on the electronic structure of Cd2SnO4 has been studied by electron-energy-loss spectroscopy (EELS) and UV photoemission spectroscopy (UPS). In substitution on Cd sites or Sb substitution in Sn sites leads to the appearance of well-defined plasmon loss peaks in EELS, w...
Main Authors: | Dou, Y, Egdell, R |
---|---|
פורמט: | Journal article |
שפה: | English |
יצא לאור: |
American Physical Society
1996
|
נושאים: |
פריטים דומים
-
Band-gap shrinkage in n-type-doped CdO probed by photoemission spectroscopy
מאת: Dou, Y, et al.
יצא לאור: (1997) -
Photoemission and STM study of the electronic structure of Nb-doped TiO2
מאת: Morris, D, et al.
יצא לאור: (2000) -
Nature of band-gap states in V-doped TiO2 revealed by resonant photoemission
מאת: Morris, D, et al.
יצא לאור: (1997) -
Competition between initial-and final-state effects in valence- and core-level x-ray photoemission of Sb-doped SnO2
מאת: Egdell, R, et al.
יצא לאור: (1999) -
A study of core and valence levels in β-PbO₂ by hard X-ray photoemission
מאת: Payne, D, et al.
יצא לאור: (2009)