EXPERIMENTAL-DETERMINATION OF THE EFFECTIVE MASSES FOR GAXIN1-XASYP1-Y ALLOYS GROWN ON INP

EXPERIMENTAL-DETERMINATION OF THE EFFECTIVE MASSES FOR GAXIN1-XASYP1-Y ALLOYS GROWN ON INP

Detalles Bibliográficos
Main Authors:	Nicholas, R, Portal, J, Houlbert, C, Perrier, P, Pearsall, T
Formato:	Journal article
Publicado:	1979

Títulos similares

CYCLOTRON-RESONANCE AND THE MAGNETOPHONON EFFECT IN GAXIN1-XASYP1-Y
por: Nicholas, R, et al.
Publicado: (1980)

A study of n-type GaxIn1-xAsyP1-y-InP quantum wells
por: Portal, J, et al.
Publicado: (1986)

SHALLOW DONOR SPECTROSCOPY IN GAXIN1-XASYP1-Y
por: Nicholas, R, et al.
Publicado: (1981)

EFFECTIVE MASSES AND NON-PARABOLICITY IN GAXIN1-XAS
por: Sarkar, C, et al.
Publicado: (1985)

MECHANISTIC ASPECTS RELATING TO THE GROWTH OF GAXIN1-XAS BY CBE
por: French, C, et al.
Publicado: (1991)

ATOMIC ORDERING IN SOLID SOLUTIONS GaxIn1-xP: EXPERIMENTAL STUDY OF THE STRUCTURAL AND MORPHOLOGICAL PROPERTIES
por: SeredinPavel V., et al.
Publicado: (2017-06-01)

OPTICAL PROPERTIES OF EPITAXIAL GaxIn1–xP SOLID SOLUTIONS WITH ATOMIC ORDERING
por: Seredin Pavel V., et al.
Publicado: (2017-09-01)

RAMAN-SCATTERING IN INP1-XASX ALLOYS
por: Carles, R, et al.
Publicado: (1980)

TWO-DIMENSIONAL MAGNETOPHONON RESONANCE .1. GAINAS-INP SUPER-LATTICES
por: Portal, J, et al.
Publicado: (1983)

IMPURITY-ASSOCIATED MAGNETOPHONON RESONANCE IN N-TYPE SILICON
por: Portal, J, et al.
Publicado: (1979)

InP and InGaAs grown on InP substrate by molecular beam epitaxy
por: Yu Hailong, et al.
Publicado: (2022-01-01)

InP nanowires grown by SA-MOVPE
por: Gao, Q, et al.
Publicado: (2012)

Insight into pressure effect on optoelectronic, mechanical, and lattice vibrational properties of nanostructured GaxIn1 − xPySbzAs1 − y − z for the solar cells system
por: E. B. Elkenany, et al.
Publicado: (2023-03-01)

PRESSURE-INDUCED CHANGES IN THE EFFECTIVE MASS OF ELECTRONS IN GAAS, INP AND (GAIN)(ASP)/INP
por: Adams, A, et al.
Publicado: (1986)

MAGNETOTRANSPORT IN GAINAS-INP HETEROJUNCTIONS AND SUPER-LATTICES
por: Nicholas, R, et al.
Publicado: (1983)

Photoluminescence of ingaas/inp grown by molecular beam epitaxy
por: Harmand Jean Christophe, et al.
Publicado: (2004-01-01)

THERMOELECTRIC-POWER OF GAINAS-INP AND GAINAS-A1INAS HETEROJUNCTIONS IN A MAGNETIC-FIELD
por: Brummell, M, et al.
Publicado: (1986)

AN EXPERIMENTAL-DETERMINATION OF ENHANCED ELECTRON G-FACTORS IN GAINAS-AIINAS HETEROJUNCTIONS
por: Nicholas, R, et al.
Publicado: (1983)

PRESSURE-DEPENDENCE STUDY OF THE EFFECTIVE MASS IN GA0.47IN0.53AS/INP HETEROJUNCTIONS
por: Gauthier, D, et al.
Publicado: (1988)

TWO-DIMENSIONAL MAGNETOPHONON RESONANCE IN GAINAS-INP SUPER-LATTICES
por: Brummell, M, et al.
Publicado: (1983)

Epitaxy and characterization of InP/InGaAs tandem solar cells grown by MOVPE on InP and Si substrates
por: Soresi Stefano, et al.
Publicado: (2023-01-01)

Native microdefects and as-grown dislocations in pure and doped InP crystals
por: Grabco, Daria, et al.
Publicado: (2011-06-01)

THE INFLUENCE OF ALLOY DISORDER ON THE K.P INTERACTION IN (GAIN) (ASP)/INP
por: Shantharama, L, et al.
Publicado: (1985)

MAGNETOOPTICS AND STRAIN EFFECTS IN GAINAS-ALINAS AND GAINAS-INP QUANTUM-WELLS
por: Rogers, D, et al.
Publicado: (1987)

1ST OBSERVATION OF THE QUANTUM HALL-EFFECT IN A GA0.47IN0.53AS-INP HETEROSTRUCTURE WITH 3 ELECTRIC SUBBANDS
por: Razeghi, M, et al.
Publicado: (1986)

QUANTUM OSCILLATIONS AT A GA0.47IN0.53AS-INP HETEROJUNCTION INTERFACE
por: Nicholas, R, et al.
Publicado: (1982)

Strained In1-xGaxAsyP1-y/InP quantum well heterostructures grown by low-pressure metalorganic vapor phase epitaxy
por: Wilson de Carvalho Jr, et al.
Publicado: (1999-04-01)

HIGH MAGNETIC-FIELD STUDIES OF THE TWO-DIMENSIONAL ELECTRON-GAS IN GALNAS-INP SUPER-LATTICES
por: Portal, J, et al.
Publicado: (1983)

A STUDY OF THE CONDUCTION-BAND NONPARABOLICITY, ANISOTROPY AND SPIN SPLITTING IN GAAS AND INP
por: Hopkins, M, et al.
Publicado: (1987)

MBE-grown long wavelength InGaAlAs/InP laser diodes
por: Choi, Woo-Young
Publicado: (2006)

Inter-band magneto-absorption in a Ga0.3In0.7As-InP strained layer superlattice
por: Rogers, D, et al.
Publicado: (1986)

TWO-DIMENSIONAL MAGNETOPHONON RESONANCE IN GAINAS-INP AND GAINAS-ALINAS HETEROJUNCTIONS AND SUPERLATTICES
por: Portal, J, et al.
Publicado: (1984)

THE K.P INTERACTION IN INP AND GAAS FROM THE BAND-GAP DEPENDENCE OF THE EFFECTIVE MASS
por: Shantharama, L, et al.
Publicado: (1984)

DEFECT CHARACTERIZATION IN MOCVD INP/GAINAS/INP LAYERS
por: Jin, N, et al.
Publicado: (1993)

InGaAsPBi grown on InP substrate by gas source molecular beam epitaxy
por: Fangkun Tian, et al.
Publicado: (2021-01-01)

DOUBLE SOURCE PHOTOCONDUCTIVITY OF INP-FE
por: Fung, S, et al.
Publicado: (1985)

The electrical and optical characterization of the InGaAs/InP alloy system
por: Towe, Elias D
Publicado: (2005)

A STUDY OF THE ENERGY-LOSS MECHANISMS FOR HOT-ELECTRONS IN CDTE AND CDS FROM OSCILLATORY PHOTOCONDUCTIVITY AND THE MAGNETOPHONON EFFECT
por: Nicholas, R, et al.
Publicado: (1980)

Tuning adsorption properties of GaxIn2−xO3 catalysts for enhancement of methanol synthesis activity from CO2 hydrogenation at high reaction temperature
por: Akkharaphatthawon, Naphattanun, et al.
Publicado: (2019)

Influence of substrate dopant type on the optical properties of GaInAs/InP multiquantum well structures grown by low pressure MOVPE
por: Wood, A, et al.
Publicado: (1997)