Spin-dependent recombination in Czochralski silicon containing oxide precipitates

Spin-dependent recombination in Czochralski silicon containing oxide precipitates

Electrically detected magnetic resonance is used to identify recombination centers in a set of Czochralski-grown silicon samples processed to contain strained oxide precipitates with a wide range of densities (∼ 1×10 9 cm -3 to ∼ 7×10 10 cm -3). Measurements reveal that photo-excited charge carriers...

Bibliografiset tiedot
Päätekijät:	Lang, V, Murphy, J, Falster, R, Morton, J
Aineistotyyppi:	Journal article
Kieli:	English
Julkaistu:	2012

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