Spin-dependent recombination in Czochralski silicon containing oxide precipitates

Spin-dependent recombination in Czochralski silicon containing oxide precipitates

Electrically detected magnetic resonance is used to identify recombination centers in a set of Czochralski-grown silicon samples processed to contain strained oxide precipitates with a wide range of densities (∼ 1×10 9 cm -3 to ∼ 7×10 10 cm -3). Measurements reveal that photo-excited charge carriers...

Πλήρης περιγραφή

Λεπτομέρειες βιβλιογραφικής εγγραφής
Κύριοι συγγραφείς:	Lang, V, Murphy, J, Falster, R, Morton, J
Μορφή:	Journal article
Γλώσσα:	English
Έκδοση:	2012

Παρόμοια τεκμήρια

Minority carrier lifetime in Czochralski silicon containing oxide precipitates
ανά: Murphy, J, κ.ά.
Έκδοση: (2010)

The impact of oxide precipitates on minority carrier lifetime in Czochralski silicon
ανά: Murphy, J, κ.ά.
Έκδοση: (2012)

On the mechanism of recombination at oxide precipitates in silicon
ανά: Murphy, J, κ.ά.
Έκδοση: (2013)

Recombination at oxide precipitates in silicon
ανά: Murphy, J, κ.ά.
Έκδοση: (2011)

Oxygen transport in Czochralski silicon investigated by dislocation locking experiments
ανά: Murphy, J, κ.ά.
Έκδοση: (2006)

Oxygen transport in Czochralski silicon investigated by dislocation locking experiments
ανά: Murphy, J, κ.ά.
Έκδοση: (2006)

Enhanced oxygen diffusion in highly doped p-type Czochralski silicon
ανά: Murphy, J, κ.ά.
Έκδοση: (2006)

Enhanced oxygen diffusion in highly doped p-type Czochralski silicon
ανά: Murphy, J, κ.ά.
Έκδοση: (2006)

Generation of dislocation glide loops in Czochralski silicon
ανά: Giannattasio, A, κ.ά.
Έκδοση: (2002)

Nitrogen transport in float-zone and Czochralski silicon investigated by dislocation locking experiments
ανά: Murphy, J, κ.ά.
Έκδοση: (2005)

Nitrogen transport in float-zone and Czochralski silicon investigated by dislocation locking experiments
ανά: Murphy, J, κ.ά.
Έκδοση: (2005)

Room temperature sub-bandgap photoluminescence from silicon containing oxide precipitates
ανά: Bothe, K, κ.ά.
Έκδοση: (2012)

Onset of slip in silicon containing oxide precipitates
ανά: Jurkschat, K, κ.ά.
Έκδοση: (2001)

Parameterisation of injection-dependent lifetime measurements in semiconductors in terms of Shockley-Read-Hall statistics: An application to oxide precipitates in silicon
ανά: Murphy, J, κ.ά.
Έκδοση: (2012)

The effect of oxide precipitates on minority carrier lifetime in p-type silicon
ανά: Murphy, J, κ.ά.
Έκδοση: (2011)

Single crystals of bismuth silicon oxide grown by the Czochralski technique and their characterisation
ανά: ANDREJA VALCIC, κ.ά.
Έκδοση: (1999-09-01)

Single crystals of bismuth silicon oxide grown by the czochralski technique and their characterisation
ανά: Golubović Aleksandar, κ.ά.
Έκδοση: (1999-01-01)

Reduced microwave attenuation in coplanar waveguides using deep level impurity compensated Czochralski-silicon substrates
ανά: Abuelgasim, A, κ.ά.
Έκδοση: (2011)

Quantitative modelling for optimization of the Czochralski growth of silicon
ανά: Kinney, Thomas Arthur
Έκδοση: (2005)

Measurements of Dislocation Locking by Near-Surface Ion-Implanted Nitrogen in Czochralski Silicon
ανά: Alpass, C, κ.ά.
Έκδοση: (2009)

Measurements of dislocation locking by near-surface ion-implanted nitrogen in Czochralski silicon
ανά: Alpass, C, κ.ά.
Έκδοση: (2008)

Semi-insulating Czochralski-silicon for radio frequency applications
ανά: Mallik, K, κ.ά.
Έκδοση: (2006)

Minority carrier lifetime in silicon photovoltaics: The effect of oxygen precipitation
ανά: Murphy, J, κ.ά.
Έκδοση: (2014)

Minority carrier lifetime in silicon photovoltaics: The effect of oxygen precipitation
ανά: Murphy, J, κ.ά.
Έκδοση: (2014)

On the dislocation-oxygen interactions in Czochralski-grown Si: oxygen diffusion and binding at low temperatures
ανά: Senkader, S, κ.ά.
Έκδοση: (2002)

Enhancement of resistivity of Czochralski silicon by deep level manganese doping
ανά: Mallik, K, κ.ά.
Έκδοση: (2006)

Adjustment of oxygen transport phenomena for Czochralski silicon crystal growth
ανά: Amir Reza Ansari Dezfoli, κ.ά.
Έκδοση: (2024-04-01)

Oxygen precipitation in Ge-doped Czochralski-silicon at 900 °C investigated by in situ high energy x-ray diffraction
ανά: Zhen Li, κ.ά.
Έκδοση: (2020-10-01)

Surface Examination of Structure Loss in N-Type Czochralski Silicon Ingots
ανά: Rania Hendawi, κ.ά.
Έκδοση: (2024-02-01)

Study of Flow Pattern Defects and Oxidation Induced Stacking Faults in Czochralski Single-Crystal Silicon Growth
ανά: Chao-Chun Yen, κ.ά.
Έκδοση: (2023-02-01)

Analysis of heat transfer, stability, and dynamics of Czochralski and liquid encapsulated Czochralski growth of semiconductor materials
ανά: Derby, Jeffrey J
Έκδοση: (2005)

Modelling of the Czochralski flow
ανά: Jan Franc
Έκδοση: (1998-01-01)

Cristobalite Formation in Fused Quartz Crucibles for Czochralski Silicon Production in Different Conditions
ανά: Gabriela Kazimiera Warden, κ.ά.
Έκδοση: (2024-12-01)

The CNN Deep Learning-Based Melting Process Prediction of Czochralski Monocrystalline Silicon
ανά: Jing Zhang, κ.ά.
Έκδοση: (2022-01-01)

Possible causes of electrical resistivity distribution inhomogeneity in Czochralski grown single crystal silicon
ανά: Svetlana P. Kobeleva, κ.ά.
Έκδοση: (2019-03-01)

GETTERING OF COPPER IN SILICON - PRECIPITATION AT EXTENDED SURFACE-DEFECTS
ανά: Decoteau, M, κ.ά.
Έκδοση: (1991)

GETTERING OF COPPER IN SILICON - PRECIPITATION AT EXTENDED SURFACE-DEFECTS
ανά: Decoteau, M, κ.ά.
Έκδοση: (1991)

Simulation of oxygen and carbon impurity transport during magnetically controlled Czochralski silicon growth
ανά: Wenyong Zhang, κ.ά.
Έκδοση: (2025-01-01)

Study on the Relationship between BO–LID and LeTID in Czochralski-Grown Monocrystalline Silicon
ανά: Hailing Li, κ.ά.
Έκδοση: (2020-11-01)

Eliminating Light-Induced Degradation in Commercial p-Type Czochralski Silicon Solar Cells
ανά: Brett Hallam, κ.ά.
Έκδοση: (2017-12-01)