Spin-dependent recombination in Czochralski silicon containing oxide precipitates
Electrically detected magnetic resonance is used to identify recombination centers in a set of Czochralski-grown silicon samples processed to contain strained oxide precipitates with a wide range of densities (∼ 1×10 9 cm -3 to ∼ 7×10 10 cm -3). Measurements reveal that photo-excited charge carriers...
| मुख्य लेखकों: | , , , |
|---|---|
| स्वरूप: | Journal article |
| भाषा: | English |
| प्रकाशित: |
2012
|