SB AND BI IMPLANTED SNO2 THIN-FILMS - PHOTOEMISSION-STUDIES AND APPLICATION AS GAS SENSORS
Thin films of SnO2 have been implanted with 90 keV 121Sb and 209Bi up to a dose of 3 x 1016 ions/cm2. Sb causes a four orders of magnitude reduction in sheet resistance and introduces electrons into the Sn 5s conduction band: these electrons can be seen directly in UV photoemission spectra. Bi is a...
| Autori principali: | , , , , |
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| Natura: | Journal article |
| Lingua: | English |
| Pubblicazione: |
1993
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| Riassunto: | Thin films of SnO2 have been implanted with 90 keV 121Sb and 209Bi up to a dose of 3 x 1016 ions/cm2. Sb causes a four orders of magnitude reduction in sheet resistance and introduces electrons into the Sn 5s conduction band: these electrons can be seen directly in UV photoemission spectra. Bi is a less effective dopant but improves the selectivity of the films toward CO relative to CH4 in gas-sensor applications. © 1993. |
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