SB AND BI IMPLANTED SNO2 THIN-FILMS - PHOTOEMISSION-STUDIES AND APPLICATION AS GAS SENSORS
Thin films of SnO2 have been implanted with 90 keV 121Sb and 209Bi up to a dose of 3 x 1016 ions/cm2. Sb causes a four orders of magnitude reduction in sheet resistance and introduces electrons into the Sn 5s conduction band: these electrons can be seen directly in UV photoemission spectra. Bi is a...
| Main Authors: | , , , , |
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| Format: | Journal article |
| Language: | English |
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1993
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| _version_ | 1826279864871682048 |
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| author | Dale, R Rastomjee, C Potter, F Egdell, R Tate, T |
| author_facet | Dale, R Rastomjee, C Potter, F Egdell, R Tate, T |
| author_sort | Dale, R |
| collection | OXFORD |
| description | Thin films of SnO2 have been implanted with 90 keV 121Sb and 209Bi up to a dose of 3 x 1016 ions/cm2. Sb causes a four orders of magnitude reduction in sheet resistance and introduces electrons into the Sn 5s conduction band: these electrons can be seen directly in UV photoemission spectra. Bi is a less effective dopant but improves the selectivity of the films toward CO relative to CH4 in gas-sensor applications. © 1993. |
| first_indexed | 2024-03-07T00:05:10Z |
| format | Journal article |
| id | oxford-uuid:774e1e6f-680b-4fb2-a61b-32c43724b739 |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-07T00:05:10Z |
| publishDate | 1993 |
| record_format | dspace |
| spelling | oxford-uuid:774e1e6f-680b-4fb2-a61b-32c43724b7392022-03-26T20:23:03ZSB AND BI IMPLANTED SNO2 THIN-FILMS - PHOTOEMISSION-STUDIES AND APPLICATION AS GAS SENSORSJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:774e1e6f-680b-4fb2-a61b-32c43724b739EnglishSymplectic Elements at Oxford1993Dale, RRastomjee, CPotter, FEgdell, RTate, TThin films of SnO2 have been implanted with 90 keV 121Sb and 209Bi up to a dose of 3 x 1016 ions/cm2. Sb causes a four orders of magnitude reduction in sheet resistance and introduces electrons into the Sn 5s conduction band: these electrons can be seen directly in UV photoemission spectra. Bi is a less effective dopant but improves the selectivity of the films toward CO relative to CH4 in gas-sensor applications. © 1993. |
| spellingShingle | Dale, R Rastomjee, C Potter, F Egdell, R Tate, T SB AND BI IMPLANTED SNO2 THIN-FILMS - PHOTOEMISSION-STUDIES AND APPLICATION AS GAS SENSORS |
| title | SB AND BI IMPLANTED SNO2 THIN-FILMS - PHOTOEMISSION-STUDIES AND APPLICATION AS GAS SENSORS |
| title_full | SB AND BI IMPLANTED SNO2 THIN-FILMS - PHOTOEMISSION-STUDIES AND APPLICATION AS GAS SENSORS |
| title_fullStr | SB AND BI IMPLANTED SNO2 THIN-FILMS - PHOTOEMISSION-STUDIES AND APPLICATION AS GAS SENSORS |
| title_full_unstemmed | SB AND BI IMPLANTED SNO2 THIN-FILMS - PHOTOEMISSION-STUDIES AND APPLICATION AS GAS SENSORS |
| title_short | SB AND BI IMPLANTED SNO2 THIN-FILMS - PHOTOEMISSION-STUDIES AND APPLICATION AS GAS SENSORS |
| title_sort | sb and bi implanted sno2 thin films photoemission studies and application as gas sensors |
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