TIME-RESOLVED STUDIES OF HOT CARRIERS AND EXCITONS IN MBE-GROWN ZNTE GASB EPILAYERS

TIME-RESOLVED STUDIES OF HOT CARRIERS AND EXCITONS IN MBE-GROWN ZNTE GASB EPILAYERS

Bibliographic Details
Main Authors:	Mcnamee, M, Taylor, R, Snow, P, Hayes, W, Ashenford, D, Lunn, B
Format:	Conference item
Published:	1994

Similar Items

TIME-RESOLVED AND CW OPTICAL STUDIES OF MBE-GROWN ZNTE/GASB EPILAYERS
by: Mcnamee, M, et al.
Published: (1994)

Oxidation of MBE-Grown ZnTe and ZnTe/Zn Nanowires and Their Structural Properties
by: Katarzyna Gas, et al.
Published: (2021-09-01)

Characterization of OMVPE-grown GaSb-based epilayers using in situ reflectance and ex situ TEM
by: Vineis, Christopher J. (Christopher Joseph), 1974-
Published: (2005)

HOT CARRIER COOLING IN GASB - BULK AND QUANTUM WELLS
by: Snow, P, et al.
Published: (1989)

On the Study of Dislocation Density in MBE GaSb-Based Structures
by: Agata Jasik, et al.
Published: (2020-11-01)

Structural Characterization of ZnTe Grown by Atomic-Layer-Deposition Regime on GaAs and GaSb (100) Oriented Substrates
by: Roberto Saúl Castillo-Ojeda, et al.
Published: (2017-03-01)

PICOSECOND PHOTOLUMINESCENCE MEASUREMENTS OF HOT CARRIER RELAXATION AND AUGER RECOMBINATION IN GASB
by: Snow, P, et al.
Published: (1989)

The effect of substrate misorientation on atomic ordering in Ga0.52In0.48P epilayers grown on GaAs(001) substrates by gas-source MBE
by: Meenakarn, C, et al.
Published: (1997)

NONLINEAR EXCITONIC OPTICAL-ABSORPTION IN GASB
by: Fox, A, et al.
Published: (1987)

Time-resolved bandgap renormalization and gain in GaN epilayers
by: Hess, S, et al.
Published: (1998)

Stimulated emission and excitonic bleaching in GaN epilayers under high-density excitation
by: Taylor, R, et al.
Published: (1999)

MAGNETOOPTICAL STUDIES OF THE TYPE-I TYPE-II CROSSOVER AND BAND-OFFSET IN ZNTE/ZN1-2MNXTE SUPERLATTICES IN MAGNETIC-FIELDS UP TO 45 T
by: Cheng, H, et al.
Published: (1995)

Relaxation modes of strained epilayers grown on patterned substrates
by: Wilkinson, A
Published: (1994)

Magneto-optical studies of the type I type II crossover and band offset in ZnTe/Zn1-xMnxTe superlattices in magnetic fields up to 45 T
by: Cheng, H, et al.
Published: (1996)

Accelerated carrier recombination by grain boundary/edge defects in MBE grown transition metal dichalcogenides
by: Ke Chen, et al.
Published: (2018-05-01)

GASB HETEROSTRUCTURES GROWN BY MOVPE
by: Chidley, E, et al.
Published: (1988)

Excitons in CdTe/ZnTe heterostructure with atomically thin CdTe layers
by: N. G. Filosofov, et al.
Published: (2020-08-01)

Exciton-phonon coupling in individual ZnTe nanorods studied by resonant Raman spectroscopy
by: Zhang, Q., et al.
Published: (2013)

GASB/INAS HETEROJUNCTIONS GROWN BY MOVPE
by: Haywood, S, et al.
Published: (1991)

APPLICATION OF HREELS TO MBE-GROWN III-V-MATERIALS
by: Graygrychowski, Z, et al.
Published: (1987)

MAGNETIC-FIELD-DEPENDENT AND TEMPERATURE-DEPENDENT EXCITON DELOCALIZATION IN A CDTE/CD1-XMNXTE SUPERLATTICE
by: Lawless, M, et al.
Published: (1993)

Ultrafast exciton dynamics in Type II ZnTe-ZnSe colloidal quantum dots.
by: Cadirci, M, et al.
Published: (2012)

Free-carrier effects in gallium nitride epilayers: Valence-band dispersion
by: Shields, P, et al.
Published: (2001)

Formation of type-II excitons in CdTe/Cd1-xMnxTe superlattices at high magnetic fields
by: Cheng, H, et al.
Published: (1997)

Evidence for a topological excitonic insulator in InAs/GaSb bilayers
by: Lingjie Du, et al.
Published: (2017-12-01)

Assessment of optical phonons in BeTe, BexZn1-xTe, p-BeTe epilayers and BeTe/ZnTe/GaAs (001) superlattices
by: Talwar, Devki N., et al.
Published: (2022)

Achieving Uniform Carrier Distribution in MBE-Grown Compositionally Graded InGaN Multiple-Quantum-Well LEDs
by: Pawan Mishra, et al.
Published: (2015-01-01)

Highly enhanced exciton recombination rate by strong electron–phonon coupling in single ZnTe nanobelt
by: Zhang, Qing, et al.
Published: (2013)

Hot carrier relaxation in GaN:LO phonon scattering and excitonic effects
by: O'Sullivan, E, et al.
Published: (1999)

Hot carrier relaxation in GaN : LO phonon scattering and excitonic effects
by: O'Sullivan, E, et al.
Published: (1999)

Optical gain in GaN epilayers
by: Hess, S, et al.
Published: (1998)

Optical gain in GaN epilayers
by: Hess, S, et al.
Published: (1998)

TIME-RESOLVED RAMAN MEASUREMENT OF INTERVALLEY SCATTERING IN GASB
by: Maly, P, et al.
Published: (1994)

Cathodoluminescence study of oval defects in MBE grown InGaAs/GaAs
by: RussellHarriott, J, et al.
Published: (1996)

Factors affecting the shape of MBE-grown laterally aligned Fe nanowires
by: Lok, Shu K., et al.
Published: (2013)

Strain-induced high ferromagnetic transition temperature of MnAs epilayer grown on GaAs (110)
by: Pan Guoqiang, et al.
Published: (2011-01-01)

MAGNETOOPTICAL STUDIES OF CDTE-CD1-XMNXTE SUPERLATTICES
by: Lawless, M, et al.
Published: (1992)

PICOSECOND AND CW LUMINESCENCE STUDIES OF CDTE CD1-XMNXTE MQWS
by: Mcnamee, M, et al.
Published: (1991)

Tuning the properties of exciton complexes in self-assembled GaSb/GaAs quantum rings
by: Ahmad Kamarudin, Mazliana, et al.
Published: (2011)

COMPOSITIONAL HOMOGENEITY OF METALORGANIC CHEMICAL VAPOR-DEPOSITION GROWN III-V COMPOUND SEMICONDUCTOR EPILAYERS
by: Mackenzie, R, et al.
Published: (1991)