Gate voltage effects in capacitively coupled quantum dots
We study a system of two symmetrical capacitively coupled quantum dots, each coupled to its own metallic lead, focusing on its evolution as a function of the gate voltage applied to each dot. Using the numerical renormalization group and poor man's scaling techniques, the low-energy Kondo scale...
| Main Authors: | , , |
|---|---|
| Format: | Journal article |
| Language: | English |
| Published: |
2006
|
| _version_ | 1826280078945812480 |
|---|---|
| author | Mitchell, A Galpin, MR Logan, D |
| author_facet | Mitchell, A Galpin, MR Logan, D |
| author_sort | Mitchell, A |
| collection | OXFORD |
| description | We study a system of two symmetrical capacitively coupled quantum dots, each coupled to its own metallic lead, focusing on its evolution as a function of the gate voltage applied to each dot. Using the numerical renormalization group and poor man's scaling techniques, the low-energy Kondo scale of the model is shown to vary significantly with the gate voltage, being exponentially small when spin and pseudospin degrees of freedom dominate; but increasing to much larger values when the gate voltage is tuned close to the edges of the Coulomb blockade staircase where low-energy charge-fluctuations also enter, leading thereby to correlated electron physics on energy/temperature scales more accessible to experiment. This range of behaviour is also shown to be manifest strongly in single-particle dynamics and electron transport through each dot. |
| first_indexed | 2024-03-07T00:08:19Z |
| format | Journal article |
| id | oxford-uuid:7853d206-e324-4bae-8f61-2c4c2f828fe9 |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-07T00:08:19Z |
| publishDate | 2006 |
| record_format | dspace |
| spelling | oxford-uuid:7853d206-e324-4bae-8f61-2c4c2f828fe92022-03-26T20:29:53ZGate voltage effects in capacitively coupled quantum dotsJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:7853d206-e324-4bae-8f61-2c4c2f828fe9EnglishSymplectic Elements at Oxford2006Mitchell, AGalpin, MRLogan, DWe study a system of two symmetrical capacitively coupled quantum dots, each coupled to its own metallic lead, focusing on its evolution as a function of the gate voltage applied to each dot. Using the numerical renormalization group and poor man's scaling techniques, the low-energy Kondo scale of the model is shown to vary significantly with the gate voltage, being exponentially small when spin and pseudospin degrees of freedom dominate; but increasing to much larger values when the gate voltage is tuned close to the edges of the Coulomb blockade staircase where low-energy charge-fluctuations also enter, leading thereby to correlated electron physics on energy/temperature scales more accessible to experiment. This range of behaviour is also shown to be manifest strongly in single-particle dynamics and electron transport through each dot. |
| spellingShingle | Mitchell, A Galpin, MR Logan, D Gate voltage effects in capacitively coupled quantum dots |
| title | Gate voltage effects in capacitively coupled quantum dots |
| title_full | Gate voltage effects in capacitively coupled quantum dots |
| title_fullStr | Gate voltage effects in capacitively coupled quantum dots |
| title_full_unstemmed | Gate voltage effects in capacitively coupled quantum dots |
| title_short | Gate voltage effects in capacitively coupled quantum dots |
| title_sort | gate voltage effects in capacitively coupled quantum dots |
| work_keys_str_mv | AT mitchella gatevoltageeffectsincapacitivelycoupledquantumdots AT galpinmr gatevoltageeffectsincapacitivelycoupledquantumdots AT logand gatevoltageeffectsincapacitivelycoupledquantumdots |