The development of information storage materials - How microscopy can help?
The response of giant magnetoresistance (GMR) devices depends critically on the film microstructure, with parameters such as layer thickness and interfacial abruptness being crucial. This paper presents results obtained using high resolution electron microscopy (HREM), chemical mapping and atom prob...
Huvudupphovsmän: | , , , , |
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Materialtyp: | Conference item |
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2002
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_version_ | 1826280101254266880 |
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author | Petford-Long, A Portier, X Shang, P Cerezo, A Larson, D |
author_facet | Petford-Long, A Portier, X Shang, P Cerezo, A Larson, D |
author_sort | Petford-Long, A |
collection | OXFORD |
description | The response of giant magnetoresistance (GMR) devices depends critically on the film microstructure, with parameters such as layer thickness and interfacial abruptness being crucial. This paper presents results obtained using high resolution electron microscopy (HREM), chemical mapping and atom probe microanalysis. Local variations in the magnetic properties are induced by the microstructure and also when the films are patterned to form small elements, These lead to changes in the magnetization reversal mechanism. Some results of the studies of the magnetization reversal carried out using in situ in Lorentz transmission electron microscopy (LTEM) magnetizing experiments are also included. |
first_indexed | 2024-03-07T00:08:39Z |
format | Conference item |
id | oxford-uuid:7871b5e2-cf75-4893-9bfc-7472800296c7 |
institution | University of Oxford |
last_indexed | 2024-03-07T00:08:39Z |
publishDate | 2002 |
record_format | dspace |
spelling | oxford-uuid:7871b5e2-cf75-4893-9bfc-7472800296c72022-03-26T20:30:43ZThe development of information storage materials - How microscopy can help?Conference itemhttp://purl.org/coar/resource_type/c_5794uuid:7871b5e2-cf75-4893-9bfc-7472800296c7Symplectic Elements at Oxford2002Petford-Long, APortier, XShang, PCerezo, ALarson, DThe response of giant magnetoresistance (GMR) devices depends critically on the film microstructure, with parameters such as layer thickness and interfacial abruptness being crucial. This paper presents results obtained using high resolution electron microscopy (HREM), chemical mapping and atom probe microanalysis. Local variations in the magnetic properties are induced by the microstructure and also when the films are patterned to form small elements, These lead to changes in the magnetization reversal mechanism. Some results of the studies of the magnetization reversal carried out using in situ in Lorentz transmission electron microscopy (LTEM) magnetizing experiments are also included. |
spellingShingle | Petford-Long, A Portier, X Shang, P Cerezo, A Larson, D The development of information storage materials - How microscopy can help? |
title | The development of information storage materials - How microscopy can help? |
title_full | The development of information storage materials - How microscopy can help? |
title_fullStr | The development of information storage materials - How microscopy can help? |
title_full_unstemmed | The development of information storage materials - How microscopy can help? |
title_short | The development of information storage materials - How microscopy can help? |
title_sort | development of information storage materials how microscopy can help |
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