The development of information storage materials - How microscopy can help?
The response of giant magnetoresistance (GMR) devices depends critically on the film microstructure, with parameters such as layer thickness and interfacial abruptness being crucial. This paper presents results obtained using high resolution electron microscopy (HREM), chemical mapping and atom prob...
| Huvudupphovsmän: | , , , , |
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| Materialtyp: | Conference item |
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2002
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