Dislocation driven problems in atomistic modelling of materials
Understanding the mechanical properties of technologically advanced materials from quantum mechanical predictions based on electronic structure calculations remains one of the most challenging problems in modern computational materials science. In this paper, we illustrate this challenge from our cu...
Autores principales: | Nguyen-Manh, D, Mrovec, M, Fitzgerald, S |
---|---|
Formato: | Journal article |
Lenguaje: | English |
Publicado: |
2008
|
Ejemplares similares
-
Atomistic and mesoscale modeling of dislocation mobility
por: Cai, Wei, 1977-
Publicado: (2005) -
Data-driven modeling of dislocation mobility from atomistics using physics-informed machine learning
por: Yifeng Tian, et al.
Publicado: (2024-09-01) -
Atomistic simulation of structure and mobility of dislocation in semiconductor
por: Choo, Zhi Min.
Publicado: (2008) -
Atomistics of defect nucleation and mobility : dislocations and twinning
por: Chang, Jinpeng, 1974-
Publicado: (2005) -
Atomistics of dislocation mobility in silicon : core structure and mechanisms
por: Justo Filho, João F
Publicado: (2009)