Influence of the postplasma process conditions on the surface conductivity of hydrogenated diamond surfaces

Influence of the postplasma process conditions on the surface conductivity of hydrogenated diamond surfaces

The influence of the postplasma process on the surface conductivity of hydrogenated diamond surfaces was presented. The influence of dry gases on the hydrogenated diamond surface was also presented. It was found that the hydrogenated surfaces are strongly influenced by the combination of wet air exp...

Descripció completa

Dades bibliogràfiques
Autors principals:	Snidero, E, Tromson, D, Mer, C, Bergonzo, P, Foord, J, Nebel, C, Williams, O, Jackman, R
Format:	Journal article
Idioma:	English
Publicat:	2003

Ítems similars

Influence of the environment on the surface conductivity of chemical vapor deposition diamond
per: Foord, J, et al.
Publicat: (2002)

Carrier generation within the surface region of hydrogenated thin film polycrystalline diamond
per: Williams, O, et al.
Publicat: (2001)

Surface studies of the reactivity of methyl, acetylene and atomic hydrogen at CVD diamond surfaces
per: Foord, J, et al.
Publicat: (1998)

Formation of shallow acceptor states in the surface region of thin film diamond
per: Williams, O, et al.
Publicat: (2001)

An insight into the mechanism of surface conductivity in thin film diamond
per: Looi, H, et al.
Publicat: (1998)

High carrier mobilities in black diamond
per: Williams, O, et al.
Publicat: (2003)

High-performance devices from surface-conducting thin-film diamond
per: Jackman, R, et al.
Publicat: (1999)

Engineering low resistance contacts on p-type hydrogenated diamond surfaces
per: Looi, H, et al.
Publicat: (2000)

Influence of surface properties on the quantum photoyield of diamond photocathodes
per: Foord, J, et al.
Publicat: (2001)

INTERACTION OF HYDROGEN WITH CHEMICAL-VAPOR-DEPOSITION DIAMOND SURFACES - A THERMAL-DESORPTION STUDY
per: Chua, L, et al.
Publicat: (1994)

Black diamond: a new material for active electronic devices
per: Williams, O, et al.
Publicat: (2002)

Understanding the chemistry of low temperature diamond growth: an investigation into the interaction of chlorine and atomic hydrogen at CVD diamond surfaces
per: Proffitt, S, et al.
Publicat: (2000)

Reactions of xenon difluoride and atomic hydrogen at chemical vapour deposited diamond surfaces
per: Foord, J, et al.
Publicat: (2001)

Mechanisms of surface conductivity in thin film diamond: Application to high performance devices
per: Looi, H, et al.
Publicat: (1999)

Interaction of organo-sulfur compounds with CVD diamond surfaces
per: Baral, B, et al.
Publicat: (2000)

Electrochemical and related processes at surface conductive diamond-solution interfaces
per: Chatterjee, A, et al.
Publicat: (2003)

An investigation of the surface reactivity of diamond photocathodes with molecular and atomic oxygen species
per: Foord, J, et al.
Publicat: (2001)

SURFACE SPECTROSCOPIC STUDIES OF THE INITIAL-STAGES OF DIAMOND GROWTH ON SI(100)
per: Jackman, R, et al.
Publicat: (1993)

The effect of hydrogen on the electronic properties of CVD diamond films
per: Looi, H, et al.
Publicat: (1999)

Electrochemically controlled modification of CVD diamond surfaces
per: Foord, J, et al.
Publicat: (2004)

Influence of material properties on the performance of diamond photocathodes
per: Foord, J, et al.
Publicat: (2002)

THE INITIAL-STAGES OF DIAMOND GROWTH - AN ADSORPTION STUDY OF HOT-FILAMENT ACTIVATED METHANE AND HYDROGEN ON SI(100)
per: Jackman, R, et al.
Publicat: (1993)

Deep level transient spectroscopy of CVD diamond: the observation of defect states in hydrogenated films
per: Gaudin, O, et al.
Publicat: (2001)

Hydrogen "doped" thin film diamond field effect transistors for high power applications
per: Looi, H, et al.
Publicat: (1998)

Surface and electrochemical studies of thin film diamond
per: Foord, J, et al.
Publicat: (2007)

Hydrogen doped thin film diamond phototransistor/photodiode structures for the detection of UV radiation
per: Whitfield, MD, et al.
Publicat: (2000)

Experimental Investigation of Metal-Diamond Thermal Interface Conductance With Different Diamond Surface Terminations
per: Collins, Kimberlee C, et al.
Publicat: (2018)

Electron induced modification of the surface electrochemical properties of diamond electrodes
per: Goeting, C, et al.
Publicat: (1999)

Permselective properties of polystyrene opal films at diamond electrode surfaces.
per: Sawangphruk, M, et al.
Publicat: (2010)

Diamond photocathodes in gaseous environments
per: Foord, J, et al.
Publicat: (2004)

METAL DEPOSITION ON SILICON: IN SITU SURFACE STUDIES.
per: Jackman, R, et al.
Publicat: (1984)

APPLICATIONS OF SURFACE SENSITIVE TECHNIQUES IN THE STUDY OF PHOTOCHEMICAL PROCESSING AT THE SOLID-GAS INTERFACE.
per: Jackman, R, et al.
Publicat: (1986)

Chemical functionalization of diamond surfaces by reaction with diaryl carbenes.
per: Wang, H, et al.
Publicat: (2008)

High carrier mobility in polycrystalline thin film diamond
per: Looi, H, et al.
Publicat: (1998)

Effects of diamond surface modification and matrix alloying on the thermal conductivity of copper/diamond composites
per: CHEN Bing-wei, et al.
Publicat: (2022-06-01)

Surface Modification of Chemical Vapor Deposited Diamond Induced by Power Ultrasound
per: Goeting, C, et al.
Publicat: (2001)

Dopant incorporation mechanisms during the growth of thin film diamond
per: Jackman, R, et al.
Publicat: (1996)

CHEMICAL VAPOR-DEPOSITION ON SILICON - INSITU SURFACE STUDIES
per: Foord, J, et al.
Publicat: (1984)

Voltammetry at boron-doped diamond electrodes in liquid ammonia: Solvent window effects and diamond surface modification
per: Del Campo, F, et al.
Publicat: (2000)

Enhancing low field electron emission from polycrystalline diamond
per: Baral, B, et al.
Publicat: (1997)