Atomic structure and dynamics of defects in transition metal dichalcogenide bilayers

<p>Transition metal dichalcogenides (TMDs), such as MoS<sub>2</sub> and WS<sub>2</sub>, are direct band gap semiconductors in their monolayer form and indirect band gap semiconductors in bulk. They offer band gaps in the red visible spectrum and semiconducting propertie...

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Bibliografske podrobnosti
Glavni avtor: Zhou, S
Drugi avtorji: Warner, JH
Format: Thesis
Jezik:English
Izdano: 2019
Teme: