SUPERLATTICE MODIFICATION OF THE VALENCE-BAND SPIN SPLITTING IN INXGA1-XAS/GAAS SUPERLATTICES UP TO 45-T

SUPERLATTICE MODIFICATION OF THE VALENCE-BAND SPIN SPLITTING IN INXGA1-XAS/GAAS SUPERLATTICES UP TO 45-T

Bibliográfalaš dieđut
Váldodahkkit:	Warburton, R, Nicholas, R, Sasaki, S, Miura, N, Woodbridge, K
Materiálatiipa:	Journal article
Almmustuhtton:	1993

Geahča maid

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Indium segregation and enrichment in coherent InxGa1-xAs/GaAs quantum dots (vol 82, pg 5148, 1999)
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Bulk Rashba‐Type Spin Splitting in Non‐Centrosymmetric Artificial Superlattices
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Influence of variation in indium concentration and temperature on the threshold current density in InxGa1-xAs/GaAs QD laser diodes
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Effect of boron incorporation on the structural and photoluminescence properties of highly-strained InxGa1-xAs/GaAs multiple quantum wells
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PLASTIC-DEFORMATION UNDER MICROINDENTATIONS IN GAAS/ALAS SUPERLATTICES
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Photoluminescence study of the dynamical properties of GaAs sawtooth superlattices
Dahkki: Johnston, M, et al.
Almmustuhtton: (1997)

GROWTH AND MBMS STUDIES OF REACTION-MECHANISMS FOR INXGA1-XAS CBE
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Almmustuhtton: (1992)

Resonant LO phonon enhanced conductivity in GaAs-AlAs superlattices
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Almmustuhtton: (2001)

Inhomogeneous sources of misfit dislocation generation in InxGa1-xAs/GaAs strained-layer heterostructures grown by molecular beam epitaxy
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Influence of magnetron sputtering conditions on the structure and surface morphology of InxGa1–xAs thin films on a GaAs (100) substrate
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Spin-obit coupling in optical superlattices
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The effect of strain and orientation on Inx̳Ga₁₋x̳As layers grown by molecular beam epitaxy
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Optical properties of InAs/GaAs quantum dot superlattice structures
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Comparison of electronic band structure and optical transparency conditions of InxGa1−xAs1−yNy∕GaAs quantum wells calculated by 10-band, 8-band, and 6-band k∙p models
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Ferromagnetism in Narrow Bands of Moiré Superlattices
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Topological Bloch bands in graphene superlattices
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Band offsets in strained layer superlattices
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GAMMA-CHI MIXING IN THE MINIBAND STRUCTURE OF A GAAS/ALAS SUPERLATTICE
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OSCILLATORY BEHAVIOR IN THE PHOTOLUMINESCENCE EXCITATION AND PHOTOCONDUCTIVITY SPECTRA OF GAAS-ALAS SUPERLATTICES
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DIRECT OBSERVATION OF THE SEMIMETAL TO SEMICONDUCTOR TRANSITION IN CROSSED BAND-GAP SUPERLATTICES AT MAGNETIC-FIELDS OF UP TO 150-T
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