SUPERLATTICE MODIFICATION OF THE VALENCE-BAND SPIN SPLITTING IN INXGA1-XAS/GAAS SUPERLATTICES UP TO 45-T

SUPERLATTICE MODIFICATION OF THE VALENCE-BAND SPIN SPLITTING IN INXGA1-XAS/GAAS SUPERLATTICES UP TO 45-T

Detalles Bibliográficos
Main Authors:	Warburton, R, Nicholas, R, Sasaki, S, Miura, N, Woodbridge, K
Formato:	Journal article
Publicado:	1993

Títulos similares

MINIBAND STRUCTURE IN INXGA1-XAS-GAAS STRAINED-LAYER SUPERLATTICES
por: Pulsford, N, et al.
Publicado: (1991)

VALENCE BAND SPIN OF SEMICONDUCTOR SUPERLATTICES
por: Warburton, R, et al.
Publicado: (1992)

Current Density of AlxGa1-xAs/GaAs Superlattice
por: Ahmed Z. Obaid, et al.
Publicado: (2024-09-01)

STRAIN AND MINIBANDS IN INGAAS-GAAS SUPERLATTICES
por: Pulsford, N, et al.
Publicado: (1991)

OPTICAL INVESTIGATION OF SUPERLATTICE ORBITS AND IMPURITY STATES IN INGAAS/GAAS
por: Warburton, R, et al.
Publicado: (1994)

SIMULATION OF SOLAR CELLS BASED ON HETEROSTRUCTURES AlxGa1-xAs - InxGa1-xAs - GaAs
por: Oleg V. Devitsky, et al.
Publicado: (2022-05-01)

Indium segregation and enrichment in coherent InxGa1-xAs/GaAs quantum dots
por: Liao, X, et al.
Publicado: (1999)

Topographical, compositional, and dopant contrast from cleavage surfaces of GaAs-AlxGa1-xAs superlattices
por: Castell, M, et al.
Publicado: (1995)

VALENCE BAND SPIN SPLITTING IN STRAINED IN0.18GA0.82AS/GAAS QUANTUM-WELLS
por: Warburton, R, et al.
Publicado: (1991)

CRITICAL THICKNESS DETERMINATION OF INXGA1-XAS/GAAS STRAINED-LAYER SYSTEM BY TRANSMISSION ELECTRON-MICROSCOPY
por: Zou, J, et al.
Publicado: (1991)

HOLE-STATE REVERSAL AND THE ROLE OF RESIDUAL STRAIN IN (IN,GA)AS-GAAS SUPERLATTICES
por: Moore, K, et al.
Publicado: (1991)

Transmission-electron microscopy study of the shape of buried InxGa1-xAs/GaAs quantum dots
por: Liao, X, et al.
Publicado: (1998)

EVOLUTION OF THE ELECTRONIC STATES OF COUPLED (IN,GA)AS-GAAS QUANTUM-WELLS INTO SUPERLATTICE MINIBANDS
por: Moore, K, et al.
Publicado: (1990)

Transmission electron microscopy study of InxGa1-xAs quantum dots on a GaAs(001) substrate
por: Zou, J, et al.
Publicado: (1999)

Carrier capture and relaxation in Stranski-Krastanow InxGa1-xAs/GaAs(311)B quantum dots
por: Lobo, C, et al.
Publicado: (2000)

A TRANSITION FROM QUANTUM WELL TO SUPERLATTICE BEHAVIOR IN GAAS-ALAS SHORT-PERIOD SUPERLATTICES
por: Pulsford, N, et al.
Publicado: (1989)

MODULATED MOLECULAR-BEAM MASS-SPECTROMETRY STUDIES OF THE GROWTH OF GAAS AND INXGA1-XAS USING TRI-ISOBUTYLGALLIUM
por: Levoguer, C, et al.
Publicado: (1994)

Synthesizing InxGa1−xAs using molten In and GaAs by the sessile drop method at 400–600 °C
por: Liang Zhao, et al.
Publicado: (2017-06-01)

Indium segregation and enrichment in coherent InxGa1-xAs/GaAs quantum dots (vol 82, pg 5148, 1999)
por: Liao, X, et al.
Publicado: (1999)

QUASI-BOND STATES IN AN ASYMMETRIC GAAS-ALAS SUPERLATTICE
por: Singleton, J, et al.
Publicado: (1987)

Bulk Rashba‐Type Spin Splitting in Non‐Centrosymmetric Artificial Superlattices
por: Woo Seung Ham, et al.
Publicado: (2023-04-01)

Influence of variation in indium concentration and temperature on the threshold current density in InxGa1-xAs/GaAs QD laser diodes
por: Zainab M. Alharbi, et al.
Publicado: (2025-01-01)

Effect of boron incorporation on the structural and photoluminescence properties of highly-strained InxGa1-xAs/GaAs multiple quantum wells
por: Qi Wang, et al.
Publicado: (2013-07-01)

PLASTIC-DEFORMATION UNDER MICROINDENTATIONS IN GAAS/ALAS SUPERLATTICES
por: Castell, M, et al.
Publicado: (1993)

Photoluminescence study of the dynamical properties of GaAs sawtooth superlattices
por: Johnston, M, et al.
Publicado: (1997)

GROWTH AND MBMS STUDIES OF REACTION-MECHANISMS FOR INXGA1-XAS CBE
por: Singh, N, et al.
Publicado: (1992)

Resonant LO phonon enhanced conductivity in GaAs-AlAs superlattices
por: Dalton, K, et al.
Publicado: (2001)

Inhomogeneous sources of misfit dislocation generation in InxGa1-xAs/GaAs strained-layer heterostructures grown by molecular beam epitaxy
por: Zou, J, et al.
Publicado: (1997)

Influence of magnetron sputtering conditions on the structure and surface morphology of InxGa1–xAs thin films on a GaAs (100) substrate
por: Oleg V. Devitsky, et al.
Publicado: (2022-09-01)

Spin-obit coupling in optical superlattices
por: Huang, Wujie
Publicado: (2016)

The effect of strain and orientation on Inx̳Ga₁₋x̳As layers grown by molecular beam epitaxy
por: Elcess, Kimberley
Publicado: (2017)

Optical properties of InAs/GaAs quantum dot superlattice structures
por: Ali Imran, et al.
Publicado: (2018-06-01)

Comparison of electronic band structure and optical transparency conditions of InxGa1−xAs1−yNy∕GaAs quantum wells calculated by 10-band, 8-band, and 6-band k∙p models
por: Ng, S., et al.
Publicado: (2013)

Ferromagnetism in Narrow Bands of Moiré Superlattices
por: Repellin, Cécile, et al.
Publicado: (2022)

Topological Bloch bands in graphene superlattices
por: Song, Justin C. W., et al.
Publicado: (2016)

Band offsets in strained layer superlattices
por: M. Oloumi, et al.
Publicado: (2004-12-01)

GAMMA-CHI MIXING IN THE MINIBAND STRUCTURE OF A GAAS/ALAS SUPERLATTICE
por: Pulsford, N, et al.
Publicado: (1989)

OSCILLATORY BEHAVIOR IN THE PHOTOLUMINESCENCE EXCITATION AND PHOTOCONDUCTIVITY SPECTRA OF GAAS-ALAS SUPERLATTICES
por: Moore, K, et al.
Publicado: (1989)

DIRECT OBSERVATION OF THE SEMIMETAL TO SEMICONDUCTOR TRANSITION IN CROSSED BAND-GAP SUPERLATTICES AT MAGNETIC-FIELDS OF UP TO 150-T
por: Barnes, D, et al.
Publicado: (1994)

SADDLE-POINT EXCITONS AND INTRABAND (GAMMA-PI) MIXING IN STRAINED-LAYER SUPERLATTICES
por: Lawless, M, et al.
Publicado: (1992)