Tailoring the topological surface state in ultrathin alpha -Sn(111) films
We report on the electronic structure of α-Sn films in the low thickness regime grown on InSb(111)A. High-resolution angle-resolved photoemission (ARPES), enhanced at low photon energies, allows for the direct observation of the linearly dispersing 2D topological surface states (TSSs) that exist bet...
| Main Authors: | , , , , , , , , , , , , |
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| Format: | Journal article |
| Language: | English |
| Published: |
American Physical Society
2019
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| _version_ | 1797076888292687872 |
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| author | Rogalev, VA Reis, F Adler, F Bauernfeind, M Erhardt, J Scholz, MR Dudy, L Duffy, LB Hesjedal, T Hoesch, M Bihlmayer, G Schaefer, J Claessen, R |
| author_facet | Rogalev, VA Reis, F Adler, F Bauernfeind, M Erhardt, J Scholz, MR Dudy, L Duffy, LB Hesjedal, T Hoesch, M Bihlmayer, G Schaefer, J Claessen, R |
| author_sort | Rogalev, VA |
| collection | OXFORD |
| description | We report on the electronic structure of α-Sn films in the low thickness regime grown on InSb(111)A. High-resolution angle-resolved photoemission (ARPES), enhanced at low photon energies, allows for the direct observation of the linearly dispersing 2D topological surface states (TSSs) that exist between the second valence band and the conduction band. The Dirac point of this TSS was found to be 200meV below the Fermi level in 10-nm-thick films, which enables the observation of the hybridization gap opening at the Dirac point of the TSS for thinner films. The cross-over to a quasi-2D electronic structure is accompanied by a full gap opening at the Brillouin zone center, in agreement with our density functional theory calculations. We further identify the thickness regime of α-Sn films where the hybridization gap in TSS coexists with the topologically non-trivial electronic structure which must result in a presence of 1D helical edge states. |
| first_indexed | 2024-03-07T00:10:02Z |
| format | Journal article |
| id | oxford-uuid:78eb039b-453c-4353-ab76-c77ab299573c |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-07T00:10:02Z |
| publishDate | 2019 |
| publisher | American Physical Society |
| record_format | dspace |
| spelling | oxford-uuid:78eb039b-453c-4353-ab76-c77ab299573c2022-03-26T20:33:55ZTailoring the topological surface state in ultrathin alpha -Sn(111) filmsJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:78eb039b-453c-4353-ab76-c77ab299573cEnglishSymplectic Elements at OxfordAmerican Physical Society2019Rogalev, VAReis, FAdler, FBauernfeind, MErhardt, JScholz, MRDudy, LDuffy, LBHesjedal, THoesch, MBihlmayer, GSchaefer, JClaessen, RWe report on the electronic structure of α-Sn films in the low thickness regime grown on InSb(111)A. High-resolution angle-resolved photoemission (ARPES), enhanced at low photon energies, allows for the direct observation of the linearly dispersing 2D topological surface states (TSSs) that exist between the second valence band and the conduction band. The Dirac point of this TSS was found to be 200meV below the Fermi level in 10-nm-thick films, which enables the observation of the hybridization gap opening at the Dirac point of the TSS for thinner films. The cross-over to a quasi-2D electronic structure is accompanied by a full gap opening at the Brillouin zone center, in agreement with our density functional theory calculations. We further identify the thickness regime of α-Sn films where the hybridization gap in TSS coexists with the topologically non-trivial electronic structure which must result in a presence of 1D helical edge states. |
| spellingShingle | Rogalev, VA Reis, F Adler, F Bauernfeind, M Erhardt, J Scholz, MR Dudy, L Duffy, LB Hesjedal, T Hoesch, M Bihlmayer, G Schaefer, J Claessen, R Tailoring the topological surface state in ultrathin alpha -Sn(111) films |
| title | Tailoring the topological surface state in ultrathin alpha -Sn(111) films |
| title_full | Tailoring the topological surface state in ultrathin alpha -Sn(111) films |
| title_fullStr | Tailoring the topological surface state in ultrathin alpha -Sn(111) films |
| title_full_unstemmed | Tailoring the topological surface state in ultrathin alpha -Sn(111) films |
| title_short | Tailoring the topological surface state in ultrathin alpha -Sn(111) films |
| title_sort | tailoring the topological surface state in ultrathin alpha sn 111 films |
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