Tailoring the topological surface state in ultrathin alpha -Sn(111) films

Tailoring the topological surface state in ultrathin alpha -Sn(111) films

We report on the electronic structure of α-Sn films in the low thickness regime grown on InSb(111)A. High-resolution angle-resolved photoemission (ARPES), enhanced at low photon energies, allows for the direct observation of the linearly dispersing 2D topological surface states (TSSs) that exist bet...

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Bibliographic Details
Main Authors:	Rogalev, VA, Reis, F, Adler, F, Bauernfeind, M, Erhardt, J, Scholz, MR, Dudy, L, Duffy, LB, Hesjedal, T, Hoesch, M, Bihlmayer, G, Schaefer, J, Claessen, R
Format:	Journal article
Language:	English
Published:	American Physical Society 2019

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