Electron backscatter diffraction and electron channeling contrast imaging of tilt and dislocations in nitride thin films
In this paper we describe the use of electron backscatter diffraction (EBSD) mapping and electron channeling contrast imaging-in the scanning electron microscope-to study tilt, atomic steps and dislocations in epitaxial GaN thin films. We show results from a series of GaN thin films of increasing th...
| Principais autores: | , , , , , , , , |
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| Formato: | Journal article |
| Idioma: | English |
| Publicado em: |
2007
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