QUANTUM OSCILLATIONS AT A GA0.47IN0.53AS-INP HETEROJUNCTION INTERFACE

QUANTUM OSCILLATIONS AT A GA0.47IN0.53AS-INP HETEROJUNCTION INTERFACE

Manylion Llyfryddiaeth
Prif Awduron:	Nicholas, R, Brummell, M, Portal, J, Razeghi, M, Poisson, M
Fformat:	Journal article
Cyhoeddwyd:	1982

Eitemau Tebyg

PRESSURE-DEPENDENCE STUDY OF THE EFFECTIVE MASS IN GA0.47IN0.53AS/INP HETEROJUNCTIONS
gan: Gauthier, D, et al.
Cyhoeddwyd: (1988)

FREQUENCY-SHIFTED POLARON COUPLING IN GA0.47IN0.53AS HETEROJUNCTIONS
gan: Nicholas, R, et al.
Cyhoeddwyd: (1985)

ELECTRON-OPTIC PHONON COUPLING IN GA0.47IN0.53AS BASED HETEROSTRUCTURES
gan: Nicholas, R, et al.
Cyhoeddwyd: (1986)

SHALLOW DONOR SPECTROSCOPY AND POLARON COUPLING IN GA0.47IN0.53AS
gan: Nicholas, R, et al.
Cyhoeddwyd: (1985)

OPTICAL STUDIES OF EXCITONS IN GA0.47IN0.53AS/INP MULTIPLE QUANTUM-WELLS
gan: Westland, D, et al.
Cyhoeddwyd: (1987)

1ST OBSERVATION OF THE QUANTUM HALL-EFFECT IN A GA0.47IN0.53AS-INP HETEROSTRUCTURE WITH 3 ELECTRIC SUBBANDS
gan: Razeghi, M, et al.
Cyhoeddwyd: (1986)

INTER-BAND MAGNETOABSORPTION IN A GA0.47IN0.53AS-AL0.48IN0.52AS QUANTUM-WELL
gan: Rogers, D, et al.
Cyhoeddwyd: (1986)

650～700℃ LPE生长三元合金In<sub>0.53</sub>Ga<sub>0.47</sub>As/（100）Inp
gan: 李树翔
Cyhoeddwyd: (1988-01-01)

Fabrication and Characterization of In<sub>0.53</sub>Ga<sub>0.47</sub>As/InAs/In<sub>0.53</sub>Ga<sub>0.47</sub>As Composite Channel Metamorphic HEMTs (mHEMTs) on a GaAs Substrate
gan: Seung Heon Shin, et al.
Cyhoeddwyd: (2022-12-01)

Tunneling field-effect transistor with Ge/In0.53Ga0.47As heterostructure as tunneling junction
gan: Hu, Hailong., et al.
Cyhoeddwyd: (2013)

Photoluminescence characterization of midinfrared InNxAs1-x/In0.53Ga0.47As/InP multiquantum wells with various N contents
gan: Sun, Handong, et al.
Cyhoeddwyd: (2009)

Optimization of Fluorine Plasma Treatment for Interface Improvement on HfO2/In0.53Ga0.47As MOSFETs
gan: Yen-Ting Chen, et al.
Cyhoeddwyd: (2012-03-01)

Local structure of Pb(Zr0.53Ti0.47)O-3
gan: Baba-Kishi, K, et al.
Cyhoeddwyd: (2014)

Infrared spectroscopic ellipsometry study of sulfur-doped In0.53Ga0.47As ultra-shallow junctions
gan: Richard D'Costa, Vijay, et al.
Cyhoeddwyd: (2014)

Comprehensive analysis of In0.53Ga0.47As SOI-FinFET for enhanced RF/wireless performance
gan: Priyanka Agrwal, et al.
Cyhoeddwyd: (2025-02-01)

Effect of Ridge Width on the Lasing Characteristics of Triangular and Rectangular InAs/In0.53Ga0.47As Quantum Well Lasers
gan: Zhejing Jiao, et al.
Cyhoeddwyd: (2022-01-01)

High mobility In[subscript 0.53]Ga[subscript 0.47]As quantum-well metal oxide semiconductor field effect transistor structures
gan: Yang, Li, et al.
Cyhoeddwyd: (2014)

MAGNETOTRANSPORT IN GAINAS-INP HETEROJUNCTIONS AND SUPER-LATTICES
gan: Nicholas, R, et al.
Cyhoeddwyd: (1983)

Investigation of device transport characteristics enhancement of In0.53Ga0.47As MOSFET through in situ NH3/N2 remote-plasma treatment
gan: P. Huang, et al.
Cyhoeddwyd: (2021-01-01)

Degradation mechanisms of the Pb1−хBaхZr0,53Ti0,47O3−δ ferroelectric structure
gan: L. I. Hurski, et al.
Cyhoeddwyd: (2020-11-01)

Large area deep ultraviolet light of Al0.47Ga0.53N/Al0.56Ga0.44N multi quantum well with carbon nanotube electron beam pumping
gan: Sung Tae Yoo, et al.
Cyhoeddwyd: (2019-07-01)

适用于长波长光纤通信的0.95～1.65μm In<sub>0.53</sub>Ga<sub>0.47</sub>As光电二极管
gan: 沙延洪, et al.
Cyhoeddwyd: (1982-01-01)

Multiferroic CoFe2O4-Pb(Zr0.53Ti0.47)O3 thick films for magnetoelectric application
gan: Chen, Wei
Cyhoeddwyd: (2012)

High Mobility In<sub>0.53</sub>Ga<sub>0.47</sub>As MOSFETs With Steep Sub-Threshold Slope Achieved by Remote Reduction of Native III-V Oxides With Metal Electrodes
gan: S. Yoshida, et al.
Cyhoeddwyd: (2017-01-01)

Fabrication and Electrical Characterization of Lead-Free BiFe0.91(Mn0.47Ti0.53)0.09O3–BaTiO3 Ceramics
gan: Nguyen Truong Tho
Cyhoeddwyd: (2020-06-01)

Thickness Dependence of Ferroelectric and Optical Properties in Pb(Zr<sub>0.53</sub>Ti<sub>0.47</sub>)O<sub>3</sub> Thin Films
gan: Jian He, et al.
Cyhoeddwyd: (2019-09-01)

Correlation between Optical Localization-State and Electrical Deep-Level State in In<sub>0.52</sub>Al<sub>0.48</sub>As/In<sub>0.53</sub>Ga<sub>0.47</sub>As Quantum Well Structure
gan: Il-Ho Ahn, et al.
Cyhoeddwyd: (2021-02-01)

Performance Analysis of TaSiO<sub>x</sub> Inspired Sub-10 nm Energy Efficient In<sub>0.53</sub>Ga<sub>0.47</sub>As Quantum Well Tri-Gate Technology
gan: Sarat K. Saluru, et al.
Cyhoeddwyd: (2017-01-01)

Dielectric relaxation and modulus spectroscopy analysis of (Na0.47 K0.47 Li0.06) NbO3 ceramics
gan: Md Kashif Shamim, et al.
Cyhoeddwyd: (2017-06-01)

Aerosol Deposited Polycrystalline PbZr<sub>0.53</sub>Ti<sub>0.47</sub>O<sub>3</sub> Thick Films with a Large Transverse Piezoelectric Coefficient
gan: Long Teng, et al.
Cyhoeddwyd: (2025-02-01)

Electrical properties and electromagnetic radiation characteristics of cement/Ba0.06Bi0.47Na0.47TiO3 composites
gan: Kumar Amit, et al.
Cyhoeddwyd: (2024-06-01)

TWO-DIMENSIONAL MAGNETOPHONON RESONANCE IN GAINAS-INP SUPER-LATTICES
gan: Brummell, M, et al.
Cyhoeddwyd: (1983)

Inter-band magneto-absorption in a Ga0.3In0.7As-InP strained layer superlattice
gan: Rogers, D, et al.
Cyhoeddwyd: (1986)

PERSISTENT PHOTOCONDUCTIVITY IN GA0.49IN0.51P/GAAS HETEROJUNCTIONS
gan: Benamor, S, et al.
Cyhoeddwyd: (1989)

HIGH MAGNETIC-FIELD STUDIES OF THE TWO-DIMENSIONAL ELECTRON-GAS IN GALNAS-INP SUPER-LATTICES
gan: Portal, J, et al.
Cyhoeddwyd: (1983)

TWO-DIMENSIONAL MAGNETOPHONON RESONANCE IN GAINAS-INP AND GAINAS-ALINAS HETEROJUNCTIONS AND SUPERLATTICES
gan: Portal, J, et al.
Cyhoeddwyd: (1984)

THERMOELECTRIC-POWER OF GAINAS-INP AND GAINAS-A1INAS HETEROJUNCTIONS IN A MAGNETIC-FIELD
gan: Brummell, M, et al.
Cyhoeddwyd: (1986)

TWO-DIMENSIONAL MAGNETOPHONON RESONANCE .1. GAINAS-INP SUPER-LATTICES
gan: Portal, J, et al.
Cyhoeddwyd: (1983)

ELECTRICAL-PHYSICAL AND DIELECTRIC PROPERTIES OF Pb<sub>0,85</sub>Zr<sub>0,53</sub>Ti<sub>0,47</sub>O<sub>3</sub> - Sr<sub>2</sub>FeMoO<sub>6-</sub><sub>δ </sub>COMPOSITES
gan: A. L. Gurskii, et al.
Cyhoeddwyd: (2019-06-01)

HARMONIC IMAGING STUDIES OF ILLUMINATION UNIFORMITY FOR 0.53-MU-ABLATIVE COMPRESSIONS
gan: Aboites, V, et al.
Cyhoeddwyd: (1984)