QUANTUM OSCILLATIONS AT A GA0.47IN0.53AS-INP HETEROJUNCTION INTERFACE

QUANTUM OSCILLATIONS AT A GA0.47IN0.53AS-INP HETEROJUNCTION INTERFACE

Λεπτομέρειες βιβλιογραφικής εγγραφής
Κύριοι συγγραφείς:	Nicholas, R, Brummell, M, Portal, J, Razeghi, M, Poisson, M
Μορφή:	Journal article
Έκδοση:	1982

Παρόμοια τεκμήρια

PRESSURE-DEPENDENCE STUDY OF THE EFFECTIVE MASS IN GA0.47IN0.53AS/INP HETEROJUNCTIONS
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FREQUENCY-SHIFTED POLARON COUPLING IN GA0.47IN0.53AS HETEROJUNCTIONS
ανά: Nicholas, R, κ.ά.
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ELECTRON-OPTIC PHONON COUPLING IN GA0.47IN0.53AS BASED HETEROSTRUCTURES
ανά: Nicholas, R, κ.ά.
Έκδοση: (1986)

SHALLOW DONOR SPECTROSCOPY AND POLARON COUPLING IN GA0.47IN0.53AS
ανά: Nicholas, R, κ.ά.
Έκδοση: (1985)

OPTICAL STUDIES OF EXCITONS IN GA0.47IN0.53AS/INP MULTIPLE QUANTUM-WELLS
ανά: Westland, D, κ.ά.
Έκδοση: (1987)

1ST OBSERVATION OF THE QUANTUM HALL-EFFECT IN A GA0.47IN0.53AS-INP HETEROSTRUCTURE WITH 3 ELECTRIC SUBBANDS
ανά: Razeghi, M, κ.ά.
Έκδοση: (1986)

INTER-BAND MAGNETOABSORPTION IN A GA0.47IN0.53AS-AL0.48IN0.52AS QUANTUM-WELL
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MAGNETOTRANSPORT IN GAINAS-INP HETEROJUNCTIONS AND SUPER-LATTICES
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适用于长波长光纤通信的0.95～1.65μm In<sub>0.53</sub>Ga<sub>0.47</sub>As光电二极管
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High Mobility In<sub>0.53</sub>Ga<sub>0.47</sub>As MOSFETs With Steep Sub-Threshold Slope Achieved by Remote Reduction of Native III-V Oxides With Metal Electrodes
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Fabrication and Electrical Characterization of Lead-Free BiFe0.91(Mn0.47Ti0.53)0.09O3–BaTiO3 Ceramics
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Performance Analysis of TaSiO<sub>x</sub> Inspired Sub-10 nm Energy Efficient In<sub>0.53</sub>Ga<sub>0.47</sub>As Quantum Well Tri-Gate Technology
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