QUANTUM OSCILLATIONS AT A GA0.47IN0.53AS-INP HETEROJUNCTION INTERFACE

ग्रंथसूची विवरण
मुख्य लेखकों:	Nicholas, R, Brummell, M, Portal, J, Razeghi, M, Poisson, M
स्वरूप:	Journal article
प्रकाशित:	1982

PRESSURE-DEPENDENCE STUDY OF THE EFFECTIVE MASS IN GA0.47IN0.53AS/INP HETEROJUNCTIONS
द्वारा: Gauthier, D, और अन्य
प्रकाशित: (1988)

FREQUENCY-SHIFTED POLARON COUPLING IN GA0.47IN0.53AS HETEROJUNCTIONS
द्वारा: Nicholas, R, और अन्य
प्रकाशित: (1985)

ELECTRON-OPTIC PHONON COUPLING IN GA0.47IN0.53AS BASED HETEROSTRUCTURES
द्वारा: Nicholas, R, और अन्य
प्रकाशित: (1986)

SHALLOW DONOR SPECTROSCOPY AND POLARON COUPLING IN GA0.47IN0.53AS
द्वारा: Nicholas, R, और अन्य
प्रकाशित: (1985)

OPTICAL STUDIES OF EXCITONS IN GA0.47IN0.53AS/INP MULTIPLE QUANTUM-WELLS
द्वारा: Westland, D, और अन्य
प्रकाशित: (1987)

1ST OBSERVATION OF THE QUANTUM HALL-EFFECT IN A GA0.47IN0.53AS-INP HETEROSTRUCTURE WITH 3 ELECTRIC SUBBANDS
द्वारा: Razeghi, M, और अन्य
प्रकाशित: (1986)

INTER-BAND MAGNETOABSORPTION IN A GA0.47IN0.53AS-AL0.48IN0.52AS QUANTUM-WELL
द्वारा: Rogers, D, और अन्य
प्रकाशित: (1986)

650～700℃ LPE生长三元合金In0.53Ga0.47As/（100）Inp
द्वारा: 李树翔
प्रकाशित: (1988-01-01)

Fabrication and Characterization of In0.53Ga0.47As/InAs/In0.53Ga0.47As Composite Channel Metamorphic HEMTs (mHEMTs) on a GaAs Substrate
द्वारा: Seung Heon Shin, और अन्य
प्रकाशित: (2022-12-01)

Preparation and some properties of Mg2Si0.53Ge0.47 single crystal and Mg2Si0.53Ge0.47 pn-junction diode
द्वारा: Ahmed A. M. El-Amir, और अन्य
प्रकाशित: (2018-11-01)

Tunneling field-effect transistor with Ge/In0.53Ga0.47As heterostructure as tunneling junction
द्वारा: Hu, Hailong., और अन्य
प्रकाशित: (2013)

Photoluminescence characterization of midinfrared InNxAs1-x/In0.53Ga0.47As/InP multiquantum wells with various N contents
द्वारा: Sun, Handong, और अन्य
प्रकाशित: (2009)

Dark current investigation in individual planar In0.53Ga0.47As/InP detector and fine pixel-pitch array with spacing variations
द्वारा: Wenqi Wang, और अन्य
प्रकाशित: (2021-12-01)

Optimization of Fluorine Plasma Treatment for Interface Improvement on HfO2/In0.53Ga0.47As MOSFETs
द्वारा: Yen-Ting Chen, और अन्य
प्रकाशित: (2012-03-01)

Local structure of Pb(Zr0.53Ti0.47)O-3
द्वारा: Baba-Kishi, K, और अन्य
प्रकाशित: (2014)

Infrared spectroscopic ellipsometry study of sulfur-doped In0.53Ga0.47As ultra-shallow junctions
द्वारा: Richard D'Costa, Vijay, और अन्य
प्रकाशित: (2014)

Comprehensive analysis of In0.53Ga0.47As SOI-FinFET for enhanced RF/wireless performance
द्वारा: Priyanka Agrwal, और अन्य
प्रकाशित: (2025-02-01)

Multi-dimensional optimization of In0.53Ga0.47As thermophotovoltaic cell using real coded genetic algorithm
द्वारा: Mansur Mohammed Ali Gamel, और अन्य
प्रकाशित: (2021-04-01)

Effect of Ridge Width on the Lasing Characteristics of Triangular and Rectangular InAs/In0.53Ga0.47As Quantum Well Lasers
द्वारा: Zhejing Jiao, और अन्य
प्रकाशित: (2022-01-01)

Optimization and temperature dependence characteristics of low temperature In0.3Ga0.7As and In0.53Ga0.47As-In0.52Al0.48As semiconductor terahertz photoconductors
द्वारा: I. Kostakis, और अन्य
प्रकाशित: (2013-09-01)

High mobility In[subscript 0.53]Ga[subscript 0.47]As quantum-well metal oxide semiconductor field effect transistor structures
द्वारा: Yang, Li, और अन्य
प्रकाशित: (2014)

MAGNETOTRANSPORT IN GAINAS-INP HETEROJUNCTIONS AND SUPER-LATTICES
द्वारा: Nicholas, R, और अन्य
प्रकाशित: (1983)

Physical investigation of gate capacitance in In0.53Ga0.47As/In0.52Al0.48As quantum-well metal-oxide-semiconductor field-effect-transistors
द्वारा: Hyeon-Bhin Jo, और अन्य
प्रकाशित: (2018-07-01)

Investigation of device transport characteristics enhancement of In0.53Ga0.47As MOSFET through in situ NH3/N2 remote-plasma treatment
द्वारा: P. Huang, और अन्य
प्रकाशित: (2021-01-01)

Degradation mechanisms of the Pb1−хBaхZr0,53Ti0,47O3−δ ferroelectric structure
द्वारा: L. I. Hurski, और अन्य
प्रकाशित: (2020-11-01)

Large area deep ultraviolet light of Al0.47Ga0.53N/Al0.56Ga0.44N multi quantum well with carbon nanotube electron beam pumping
द्वारा: Sung Tae Yoo, और अन्य
प्रकाशित: (2019-07-01)

适用于长波长光纤通信的0.95～1.65μm In0.53Ga0.47As光电二极管
द्वारा: 沙延洪, और अन्य
प्रकाशित: (1982-01-01)

Multiferroic CoFe2O4-Pb(Zr0.53Ti0.47)O3 thick films for magnetoelectric application
द्वारा: Chen, Wei
प्रकाशित: (2012)

High Mobility In0.53Ga0.47As MOSFETs With Steep Sub-Threshold Slope Achieved by Remote Reduction of Native III-V Oxides With Metal Electrodes
द्वारा: S. Yoshida, और अन्य
प्रकाशित: (2017-01-01)

Fabrication and Electrical Characterization of Lead-Free BiFe0.91(Mn0.47Ti0.53)0.09O3–BaTiO3 Ceramics
द्वारा: Nguyen Truong Tho
प्रकाशित: (2020-06-01)

Thickness Dependence of Ferroelectric and Optical Properties in Pb(Zr0.53Ti0.47)O3 Thin Films
द्वारा: Jian He, और अन्य
प्रकाशित: (2019-09-01)

Correlation between Optical Localization-State and Electrical Deep-Level State in In0.52Al0.48As/In0.53Ga0.47As Quantum Well Structure
द्वारा: Il-Ho Ahn, और अन्य
प्रकाशित: (2021-02-01)

Performance Analysis of TaSiOx Inspired Sub-10 nm Energy Efficient In0.53Ga0.47As Quantum Well Tri-Gate Technology
द्वारा: Sarat K. Saluru, और अन्य
प्रकाशित: (2017-01-01)

Dielectric relaxation and modulus spectroscopy analysis of (Na0.47 K0.47 Li0.06) NbO3 ceramics
द्वारा: Md Kashif Shamim, और अन्य
प्रकाशित: (2017-06-01)

Aerosol Deposited Polycrystalline PbZr0.53Ti0.47O3 Thick Films with a Large Transverse Piezoelectric Coefficient
द्वारा: Long Teng, और अन्य
प्रकाशित: (2025-02-01)

Electrical properties and electromagnetic radiation characteristics of cement/Ba0.06Bi0.47Na0.47TiO3 composites
द्वारा: Kumar Amit, और अन्य
प्रकाशित: (2024-06-01)

TWO-DIMENSIONAL MAGNETOPHONON RESONANCE IN GAINAS-INP SUPER-LATTICES
द्वारा: Brummell, M, और अन्य
प्रकाशित: (1983)

Inter-band magneto-absorption in a Ga0.3In0.7As-InP strained layer superlattice
द्वारा: Rogers, D, और अन्य
प्रकाशित: (1986)

PERSISTENT PHOTOCONDUCTIVITY IN GA0.49IN0.51P/GAAS HETEROJUNCTIONS
द्वारा: Benamor, S, और अन्य
प्रकाशित: (1989)

TWO-DIMENSIONAL MAGNETOPHONON RESONANCE IN GAINAS-INP AND GAINAS-ALINAS HETEROJUNCTIONS AND SUPERLATTICES
द्वारा: Portal, J, और अन्य
प्रकाशित: (1984)

QUANTUM OSCILLATIONS AT A GA0.47IN0.53AS-INP HETEROJUNCTION INTERFACE

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