QUANTUM OSCILLATIONS AT A GA0.47IN0.53AS-INP HETEROJUNCTION INTERFACE

QUANTUM OSCILLATIONS AT A GA0.47IN0.53AS-INP HETEROJUNCTION INTERFACE

Библиографические подробности
Главные авторы:	Nicholas, R, Brummell, M, Portal, J, Razeghi, M, Poisson, M
Формат:	Journal article
Опубликовано:	1982

Схожие документы

PRESSURE-DEPENDENCE STUDY OF THE EFFECTIVE MASS IN GA0.47IN0.53AS/INP HETEROJUNCTIONS
по: Gauthier, D, и др.
Опубликовано: (1988)

FREQUENCY-SHIFTED POLARON COUPLING IN GA0.47IN0.53AS HETEROJUNCTIONS
по: Nicholas, R, и др.
Опубликовано: (1985)

ELECTRON-OPTIC PHONON COUPLING IN GA0.47IN0.53AS BASED HETEROSTRUCTURES
по: Nicholas, R, и др.
Опубликовано: (1986)

SHALLOW DONOR SPECTROSCOPY AND POLARON COUPLING IN GA0.47IN0.53AS
по: Nicholas, R, и др.
Опубликовано: (1985)

OPTICAL STUDIES OF EXCITONS IN GA0.47IN0.53AS/INP MULTIPLE QUANTUM-WELLS
по: Westland, D, и др.
Опубликовано: (1987)

1ST OBSERVATION OF THE QUANTUM HALL-EFFECT IN A GA0.47IN0.53AS-INP HETEROSTRUCTURE WITH 3 ELECTRIC SUBBANDS
по: Razeghi, M, и др.
Опубликовано: (1986)

INTER-BAND MAGNETOABSORPTION IN A GA0.47IN0.53AS-AL0.48IN0.52AS QUANTUM-WELL
по: Rogers, D, и др.
Опубликовано: (1986)

650～700℃ LPE生长三元合金In<sub>0.53</sub>Ga<sub>0.47</sub>As/（100）Inp
по: 李树翔
Опубликовано: (1988-01-01)

Fabrication and Characterization of In<sub>0.53</sub>Ga<sub>0.47</sub>As/InAs/In<sub>0.53</sub>Ga<sub>0.47</sub>As Composite Channel Metamorphic HEMTs (mHEMTs) on a GaAs Substrate
по: Seung Heon Shin, и др.
Опубликовано: (2022-12-01)

Tunneling field-effect transistor with Ge/In0.53Ga0.47As heterostructure as tunneling junction
по: Hu, Hailong., и др.
Опубликовано: (2013)

Photoluminescence characterization of midinfrared InNxAs1-x/In0.53Ga0.47As/InP multiquantum wells with various N contents
по: Sun, Handong, и др.
Опубликовано: (2009)

Optimization of Fluorine Plasma Treatment for Interface Improvement on HfO2/In0.53Ga0.47As MOSFETs
по: Yen-Ting Chen, и др.
Опубликовано: (2012-03-01)

Local structure of Pb(Zr0.53Ti0.47)O-3
по: Baba-Kishi, K, и др.
Опубликовано: (2014)

Infrared spectroscopic ellipsometry study of sulfur-doped In0.53Ga0.47As ultra-shallow junctions
по: Richard D'Costa, Vijay, и др.
Опубликовано: (2014)

Comprehensive analysis of In0.53Ga0.47As SOI-FinFET for enhanced RF/wireless performance
по: Priyanka Agrwal, и др.
Опубликовано: (2025-02-01)

Effect of Ridge Width on the Lasing Characteristics of Triangular and Rectangular InAs/In0.53Ga0.47As Quantum Well Lasers
по: Zhejing Jiao, и др.
Опубликовано: (2022-01-01)

High mobility In[subscript 0.53]Ga[subscript 0.47]As quantum-well metal oxide semiconductor field effect transistor structures
по: Yang, Li, и др.
Опубликовано: (2014)

MAGNETOTRANSPORT IN GAINAS-INP HETEROJUNCTIONS AND SUPER-LATTICES
по: Nicholas, R, и др.
Опубликовано: (1983)

Degradation mechanisms of the Pb1−хBaхZr0,53Ti0,47O3−δ ferroelectric structure
по: L. I. Hurski, и др.
Опубликовано: (2020-11-01)

Large area deep ultraviolet light of Al0.47Ga0.53N/Al0.56Ga0.44N multi quantum well with carbon nanotube electron beam pumping
по: Sung Tae Yoo, и др.
Опубликовано: (2019-07-01)

适用于长波长光纤通信的0.95～1.65μm In<sub>0.53</sub>Ga<sub>0.47</sub>As光电二极管
по: 沙延洪, и др.
Опубликовано: (1982-01-01)

Multiferroic CoFe2O4-Pb(Zr0.53Ti0.47)O3 thick films for magnetoelectric application
по: Chen, Wei
Опубликовано: (2012)

High Mobility In<sub>0.53</sub>Ga<sub>0.47</sub>As MOSFETs With Steep Sub-Threshold Slope Achieved by Remote Reduction of Native III-V Oxides With Metal Electrodes
по: S. Yoshida, и др.
Опубликовано: (2017-01-01)

Fabrication and Electrical Characterization of Lead-Free BiFe0.91(Mn0.47Ti0.53)0.09O3–BaTiO3 Ceramics
по: Nguyen Truong Tho
Опубликовано: (2020-06-01)

Thickness Dependence of Ferroelectric and Optical Properties in Pb(Zr<sub>0.53</sub>Ti<sub>0.47</sub>)O<sub>3</sub> Thin Films
по: Jian He, и др.
Опубликовано: (2019-09-01)

Correlation between Optical Localization-State and Electrical Deep-Level State in In<sub>0.52</sub>Al<sub>0.48</sub>As/In<sub>0.53</sub>Ga<sub>0.47</sub>As Quantum Well Structure
по: Il-Ho Ahn, и др.
Опубликовано: (2021-02-01)

Performance Analysis of TaSiO<sub>x</sub> Inspired Sub-10 nm Energy Efficient In<sub>0.53</sub>Ga<sub>0.47</sub>As Quantum Well Tri-Gate Technology
по: Sarat K. Saluru, и др.
Опубликовано: (2017-01-01)

Dielectric relaxation and modulus spectroscopy analysis of (Na0.47 K0.47 Li0.06) NbO3 ceramics
по: Md Kashif Shamim, и др.
Опубликовано: (2017-06-01)

Aerosol Deposited Polycrystalline PbZr<sub>0.53</sub>Ti<sub>0.47</sub>O<sub>3</sub> Thick Films with a Large Transverse Piezoelectric Coefficient
по: Long Teng, и др.
Опубликовано: (2025-02-01)

Electrical properties and electromagnetic radiation characteristics of cement/Ba0.06Bi0.47Na0.47TiO3 composites
по: Kumar Amit, и др.
Опубликовано: (2024-06-01)

TWO-DIMENSIONAL MAGNETOPHONON RESONANCE IN GAINAS-INP SUPER-LATTICES
по: Brummell, M, и др.
Опубликовано: (1983)

Inter-band magneto-absorption in a Ga0.3In0.7As-InP strained layer superlattice
по: Rogers, D, и др.
Опубликовано: (1986)

PERSISTENT PHOTOCONDUCTIVITY IN GA0.49IN0.51P/GAAS HETEROJUNCTIONS
по: Benamor, S, и др.
Опубликовано: (1989)

HIGH MAGNETIC-FIELD STUDIES OF THE TWO-DIMENSIONAL ELECTRON-GAS IN GALNAS-INP SUPER-LATTICES
по: Portal, J, и др.
Опубликовано: (1983)

TWO-DIMENSIONAL MAGNETOPHONON RESONANCE IN GAINAS-INP AND GAINAS-ALINAS HETEROJUNCTIONS AND SUPERLATTICES
по: Portal, J, и др.
Опубликовано: (1984)

THERMOELECTRIC-POWER OF GAINAS-INP AND GAINAS-A1INAS HETEROJUNCTIONS IN A MAGNETIC-FIELD
по: Brummell, M, и др.
Опубликовано: (1986)

TWO-DIMENSIONAL MAGNETOPHONON RESONANCE .1. GAINAS-INP SUPER-LATTICES
по: Portal, J, и др.
Опубликовано: (1983)

ELECTRICAL-PHYSICAL AND DIELECTRIC PROPERTIES OF Pb<sub>0,85</sub>Zr<sub>0,53</sub>Ti<sub>0,47</sub>O<sub>3</sub> - Sr<sub>2</sub>FeMoO<sub>6-</sub><sub>δ </sub>COMPOSITES
по: A. L. Gurskii, и др.
Опубликовано: (2019-06-01)

HARMONIC IMAGING STUDIES OF ILLUMINATION UNIFORMITY FOR 0.53-MU-ABLATIVE COMPRESSIONS
по: Aboites, V, и др.
Опубликовано: (1984)

Measurement of the uniformity of ablation for 0.53 μm laser irradiation of spherical targets
по: Apte, P, и др.
Опубликовано: (1988)