Spectroscopic determination of the doping and mobility of terahertz quantum cascade structures

Terahertz time-domain spectroscopy is shown to provide a convenient and rapid means to measure the conductivity of individual layers in semiconductor heterostructures such as terahertz quantum cascade lasers. By modeling the complex transmission at terahertz frequencies, the electron density and the...

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Main Authors: Lloyd-Hughes, J, Delley, Y, Scalari, G, Fischer, M, Liverini, V, Beck, M, Faist, J
Format: Journal article
Language:English
Published: 2009
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author Lloyd-Hughes, J
Delley, Y
Scalari, G
Fischer, M
Liverini, V
Beck, M
Faist, J
author_facet Lloyd-Hughes, J
Delley, Y
Scalari, G
Fischer, M
Liverini, V
Beck, M
Faist, J
author_sort Lloyd-Hughes, J
collection OXFORD
description Terahertz time-domain spectroscopy is shown to provide a convenient and rapid means to measure the conductivity of individual layers in semiconductor heterostructures such as terahertz quantum cascade lasers. By modeling the complex transmission at terahertz frequencies, the electron density and the in-plane momentum scattering time of the active regions and doped contact layers were determined for both GaAs/AlGaAs and InGaAs/InAlAs epilayers. The measured temperature dependence of the electron scattering rate revealed the significance of impurity and LO phonon scattering. The implications for laser operation at room temperature are discussed by considering the changes in absorption and resonant tunneling current with temperature. © 2009 American Institute of Physics.
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spelling oxford-uuid:7aad775d-d80a-4519-b903-6fa5c14a6a592022-03-26T20:45:35ZSpectroscopic determination of the doping and mobility of terahertz quantum cascade structuresJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:7aad775d-d80a-4519-b903-6fa5c14a6a59EnglishSymplectic Elements at Oxford2009Lloyd-Hughes, JDelley, YScalari, GFischer, MLiverini, VBeck, MFaist, JTerahertz time-domain spectroscopy is shown to provide a convenient and rapid means to measure the conductivity of individual layers in semiconductor heterostructures such as terahertz quantum cascade lasers. By modeling the complex transmission at terahertz frequencies, the electron density and the in-plane momentum scattering time of the active regions and doped contact layers were determined for both GaAs/AlGaAs and InGaAs/InAlAs epilayers. The measured temperature dependence of the electron scattering rate revealed the significance of impurity and LO phonon scattering. The implications for laser operation at room temperature are discussed by considering the changes in absorption and resonant tunneling current with temperature. © 2009 American Institute of Physics.
spellingShingle Lloyd-Hughes, J
Delley, Y
Scalari, G
Fischer, M
Liverini, V
Beck, M
Faist, J
Spectroscopic determination of the doping and mobility of terahertz quantum cascade structures
title Spectroscopic determination of the doping and mobility of terahertz quantum cascade structures
title_full Spectroscopic determination of the doping and mobility of terahertz quantum cascade structures
title_fullStr Spectroscopic determination of the doping and mobility of terahertz quantum cascade structures
title_full_unstemmed Spectroscopic determination of the doping and mobility of terahertz quantum cascade structures
title_short Spectroscopic determination of the doping and mobility of terahertz quantum cascade structures
title_sort spectroscopic determination of the doping and mobility of terahertz quantum cascade structures
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