The effect of substrate misorientation on atomic ordering in Ga0.52In0.48P epilayers grown on GaAs(001) substrates by gas-source MBE

The effect of substrate misorientation on atomic ordering in Ga0.52In0.48P epilayers grown on GaAs(001) substrates by gas-source MBE

The ternary III-V semiconductor Ga0.52In0.48P grown on GaAs substrate has been studied for visible wavelength light sources for information processing, laser printing and compact disk systems. In epilayers grown by MOCVD or Solid Source MBE, optical emission with reduced energy is known to originate...

Mô tả đầy đủ

Chi tiết về thư mục
Những tác giả chính:	Meenakarn, C, Staton-Bevan, A, Dawson, MD, Duggan, G, Kean, A, Najda, S
Định dạng:	Conference item
Được phát hành:	1997

Những quyển sách tương tự

INTER-BAND MAGNETOABSORPTION IN A GA0.47IN0.53AS-AL0.48IN0.52AS QUANTUM-WELL
Bằng: Rogers, D, et al.
Được phát hành: (1986)

Below-bandgap photoluminescence from GaAs substrates induced by pre-MBE-growth treatments
Bằng: Ronel Christian Roca, et al.
Được phát hành: (2019-07-01)

Optimization and temperature dependence characteristics of low temperature In0.3Ga0.7As and In0.53Ga0.47As-In0.52Al0.48As semiconductor terahertz photoconductors
Bằng: I. Kostakis, et al.
Được phát hành: (2013-09-01)

MBE growth and investigation of (001) GaAs surfaces using SIMS
Bằng: Croydon, W. F.
Được phát hành: (1985)

Electrical characterisation of deep level defects in Be-doped AlGaAs grown on (100) and (311)A GaAs substrates by MBE
Bằng: Henini Mohamed, et al.
Được phát hành: (2011-01-01)

High Quality GaAs Epilayers Grown on Si Substrate Using 100 nm Ge Buffer Layer
Bằng: Wei-Cheng Kuo, et al.
Được phát hành: (2016-01-01)

Numerical Analysis of Dark Currents in T2SL nBn Detector Grown by MBE on GaAs Substrate
Bằng: Małgorzata Kopytko, et al.
Được phát hành: (2019-10-01)

Telecom C-band photon emission from (In,Ga)As quantum dots generated by filling nanoholes in In0.52Al0.48As layers
Bằng: D. Deutsch, et al.
Được phát hành: (2023-05-01)

Cathodoluminescence study of oval defects in MBE grown InGaAs/GaAs
Bằng: RussellHarriott, J, et al.
Được phát hành: (1996)

A New AlGaAs/GaAs/InGaAs Lasing Switch Grown by MBE
Bằng: Ming Rong Lee, et al.
Được phát hành: (2001-01-01)

Physical investigation of gate capacitance in In0.53Ga0.47As/In0.52Al0.48As quantum-well metal-oxide-semiconductor field-effect-transistors
Bằng: Hyeon-Bhin Jo, et al.
Được phát hành: (2018-07-01)

PA-MBE GaN-Based Optoelectronics on Silicon Substrates
Bằng: Chuah , Lee Siang
Được phát hành: (2009)

Growth of GaAs/AlGaAs quantum well lasers and GaAs/InGaAs vertical cavity surface emitting lasers by MBE
Bằng: Li, Chaoyong.
Được phát hành: (2009)

Effect of Substrate Misorientation on the Structural and Optical Characteristics of In-Rich InGaAs/GaAsP Quantum Wells
Bằng: Zhiwei Li, et al.
Được phát hành: (2021-09-01)

Nanoscratch Characterization of GaN Epilayers on c- and a-Axis Sapphire Substrates
Bằng: Wen Hua-Chiang, et al.
Được phát hành: (2010-01-01)

Multilayers of InGaAs Nanostructures Grown on GaAs(210) Substrates
Bằng: Wang Zhiming, et al.
Được phát hành: (2010-01-01)

Lomer-Cottrell misfit dislocations in [001]In0.2Ga0.8As/GaAs single heterostructures
Bằng: Zou, J, et al.
Được phát hành: (1996)

Self-Assembled Local Artificial Substrates of GaAs on Si Substrate
Bằng: Frigeri C, et al.
Được phát hành: (2010-01-01)

The interfacial features in photoluminescence of In0.52Al0.48As/InP distinguished with selective excitation
Bằng: Xiao Hu, et al.
Được phát hành: (2024-01-01)

Optoelectronic properties comparison of 10 and 20 multi quantum wells Ga0.952In0.048N0.016As0.984/GaAs p-i-n photodetector for 1.0 µm wavelength
Bằng: Megat Muhammad Ikhsan Megat Hasnan, et al.
Được phát hành: (2022)

Substrate and Mg doping effects in GaAs nanowires
Bằng: Perumal Kannappan, et al.
Được phát hành: (2017-10-01)

Surface and optical characteristics of polycrystalline GaN layer with different pores profile of porous GaAs/GaAs substrate
Bằng: Md Taib, Muhamad Ikram, et al.
Được phát hành: (2019)

Thickness dependence of magnetoelectric response for composites of Pb(Zr0.52Ti0.48)O3 films on CoFe2O4 ceramic substrates
Bằng: Jing Wang, et al.
Được phát hành: (2014-08-01)

Optoelectronic properties comparison of 10 and 20 multi quantum wells Ga0.952In0.048N0.016As0.984/GaAs p-i-n photodetector for 1.0 μm wavelength
Bằng: Megat Hasnan, M. M. I., et al.
Được phát hành: (2022)

Nucleation of Ga droplets self-assembly on GaAs(111)A substrates
Bằng: Artur Tuktamyshev, et al.
Được phát hành: (2021-03-01)

Characterization of Cd1-xZnx Te (0≤x≤1) Nanolayers Grown by Atomic Layer Deposition on GaSb and GaAs (001) Oriented Substrates*
Bằng: Joel Díaz-Reyes, et al.
Được phát hành: (2019-06-01)

Magneto-photoluminescence study of InGaAs/GaAs quantum wells and quantum dots grown on (111)B GaAs substrate
Bằng: Tyan, S, et al.
Được phát hành: (2000)

Photoluminescence studies of In0.5Ga0.5As/GaAs quantum dots /
Bằng: Yussof Wahab, author, et al.
Được phát hành: (2006)

Photoluminescence studies of In0.5Ga0.5As/GaAs quantum dots
Bằng: Wahab, Yussof, et al.
Được phát hành: (2006)

Photoluminescence Studies of In0.5Ga0.5As/GaAs quantum dots
Bằng: Wahab, Yussof, et al.
Được phát hành: (2006)

Sb and N Incorporation Interplay in GaAsSbN/GaAs Epilayers near Lattice-Matching Condition for 1.0–1.16-eV Photonic Applications
Bằng: V. Braza, et al.
Được phát hành: (2017-05-01)

Transmission electron microscopy study of InxGa1-xAs quantum dots on a GaAs(001) substrate
Bằng: Zou, J, et al.
Được phát hành: (1999)

Lattice Matched AlAs/GaAs/GaAs0.94Bi0.0583/GaAs0.91Bi0.0857 Multi-Junction Solar Cell with Optimized Thickness: A Theoretical Approach
Bằng: ALAMGIR Badsha, et al.
Được phát hành: (2020-10-01)

New Submicron Low Gate Leakage In<sub>0.52</sub>Al<sub>0.48</sub>As-In<sub>0.7</sub>Ga<sub>0.3</sub>As pHEMT for Low-Noise Applications
Bằng: Mohamed Fauzi Packeer Mohamed, et al.
Được phát hành: (2021-11-01)

Strain-induced high ferromagnetic transition temperature of MnAs epilayer grown on GaAs (110)
Bằng: Pan Guoqiang, et al.
Được phát hành: (2011-01-01)

Defect-Free GaAs/AlGaAs Core-Shell Nanowires on Si Substrates
Bằng: Kang, J, et al.
Được phát hành: (2011)

Vertically standing Ge nanowires on GaAs(110) substrates
Bằng: Song, MS, et al.
Được phát hành: (2008)

Novel growth and properties of GaAs nanowires on Si substrates.
Bằng: Kang, J, et al.
Được phát hành: (2010)

GaAs Molecular Beam Epitaxy on (110)-Oriented Substrates
Bằng: Evgeniy Klimov, et al.
Được phát hành: (2022-12-01)

GaAs/Ge/Si epitaxial substrates: Development and characteristics
Bằng: Yury Buzynin, et al.
Được phát hành: (2017-01-01)