On the difference in valence electron plasmon energy and density of states between beta- and cubic-Si3N4
<p>Core and valence level photoemissionspectra of β- and cubic-Si<sub>3</sub>N<sub>4</sub> have been measured under monochromatic Al<em>K</em>α excitation. Strong satellites to high binding energy of the core lines are shown to arise from excitation of valen...
| المؤلفون الرئيسيون: | , , , |
|---|---|
| التنسيق: | Journal article |
| اللغة: | English |
| منشور في: |
American Institute of Physics
2003
|
| الملخص: | <p>Core and valence level photoemissionspectra of β- and cubic-Si<sub>3</sub>N<sub>4</sub> have been measured under monochromatic Al<em>K</em>α excitation. Strong satellites to high binding energy of the core lines are shown to arise from excitation of valence electron plasmons during the photoemission process. An increase in the plasmonenergy from 23.45 eV for β-Si<sub>3</sub>N<sub>4</sub> to 26.10 eV for cubic-Si<sub>3</sub>N<sub>4</sub> is of the magnitude expected from the 26% increase in the valence electron density associated with the shock-induced β-to-cubic phase transition. The measuredvalence banddensity of states for cubic-Si<sub>3</sub>N<sub>4</sub> is in agreement with theoretical calculations.</p> |
|---|