On the difference in valence electron plasmon energy and density of states between beta- and cubic-Si3N4

<p>Core and valence level photoemissionspectra of β- and cubic-Si<sub>3</sub>N<sub>4</sub> have been measured under monochromatic Al<em>K</em>α excitation. Strong satellites to high binding energy of the core lines are shown to arise from excitation of valen...

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Hauptverfasser: Egdell, R, Henrich, V, Bowdler, R, Sekine, T
Format: Journal article
Sprache:English
Veröffentlicht: American Institute of Physics 2003
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author Egdell, R
Henrich, V
Bowdler, R
Sekine, T
author_facet Egdell, R
Henrich, V
Bowdler, R
Sekine, T
author_sort Egdell, R
collection OXFORD
description <p>Core and valence level photoemissionspectra of β- and cubic-Si<sub>3</sub>N<sub>4</sub> have been measured under monochromatic Al<em>K</em>α excitation. Strong satellites to high binding energy of the core lines are shown to arise from excitation of valence electron plasmons during the photoemission process. An increase in the plasmonenergy from 23.45 eV for β-Si<sub>3</sub>N<sub>4</sub> to 26.10 eV for cubic-Si<sub>3</sub>N<sub>4</sub> is of the magnitude expected from the 26% increase in the valence electron density associated with the shock-induced β-to-cubic phase transition. The measuredvalence banddensity of states for cubic-Si<sub>3</sub>N<sub>4</sub> is in agreement with theoretical calculations.</p>
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spelling oxford-uuid:7af4a0f5-c7f3-4476-8ec6-6fdcd28bd5702022-03-26T20:47:23ZOn the difference in valence electron plasmon energy and density of states between beta- and cubic-Si3N4Journal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:7af4a0f5-c7f3-4476-8ec6-6fdcd28bd570EnglishSymplectic Elements at OxfordAmerican Institute of Physics2003Egdell, RHenrich, VBowdler, RSekine, T<p>Core and valence level photoemissionspectra of β- and cubic-Si<sub>3</sub>N<sub>4</sub> have been measured under monochromatic Al<em>K</em>α excitation. Strong satellites to high binding energy of the core lines are shown to arise from excitation of valence electron plasmons during the photoemission process. An increase in the plasmonenergy from 23.45 eV for β-Si<sub>3</sub>N<sub>4</sub> to 26.10 eV for cubic-Si<sub>3</sub>N<sub>4</sub> is of the magnitude expected from the 26% increase in the valence electron density associated with the shock-induced β-to-cubic phase transition. The measuredvalence banddensity of states for cubic-Si<sub>3</sub>N<sub>4</sub> is in agreement with theoretical calculations.</p>
spellingShingle Egdell, R
Henrich, V
Bowdler, R
Sekine, T
On the difference in valence electron plasmon energy and density of states between beta- and cubic-Si3N4
title On the difference in valence electron plasmon energy and density of states between beta- and cubic-Si3N4
title_full On the difference in valence electron plasmon energy and density of states between beta- and cubic-Si3N4
title_fullStr On the difference in valence electron plasmon energy and density of states between beta- and cubic-Si3N4
title_full_unstemmed On the difference in valence electron plasmon energy and density of states between beta- and cubic-Si3N4
title_short On the difference in valence electron plasmon energy and density of states between beta- and cubic-Si3N4
title_sort on the difference in valence electron plasmon energy and density of states between beta and cubic si3n4
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AT henrichv onthedifferenceinvalenceelectronplasmonenergyanddensityofstatesbetweenbetaandcubicsi3n4
AT bowdlerr onthedifferenceinvalenceelectronplasmonenergyanddensityofstatesbetweenbetaandcubicsi3n4
AT sekinet onthedifferenceinvalenceelectronplasmonenergyanddensityofstatesbetweenbetaandcubicsi3n4