Quantitative estimate of H abstraction by thermal Si H3 on hydrogenated Si (001) (2×1)

A very high probability (∼60%) for H abstraction induced by Si H3 thermal impacts on the Si (001) (2×1) hydrogenated surface is reported, as a consequence of the Eley-Rideal mechanism by which a silane molecule is formed. The reaction probability is computed within a fully dynamical approach. After...

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Những tác giả chính: Cereda, S, Ceriotti, M, Montalenti, F, Bernasconi, M, Miglio, L
Định dạng: Journal article
Ngôn ngữ:English
Được phát hành: 2007