Composition and its impact on shape evolution in dislocated Ge(Si)/Si islands
The composition distribution of Ge(Si)/Si (001) islands grown at 700°C by molecular beam epitaxy is investigated using high-spatial resolution x-ray energy dispersive spectrometry in a scanning transmission electron microscope. Island shapes are investigated using cross-section transmission electron...
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Detalles Bibliográficos
| Main Authors: |
Liao, X,
Zou, J,
Cockayne, D,
Jiang, Z,
Wang, X,
Leon, R |
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| Formato: | Journal article
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| Idioma: | English |
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| Publicado: |
2000
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