Composition and its impact on shape evolution in dislocated Ge(Si)/Si islands
The composition distribution of Ge(Si)/Si (001) islands grown at 700°C by molecular beam epitaxy is investigated using high-spatial resolution x-ray energy dispersive spectrometry in a scanning transmission electron microscope. Island shapes are investigated using cross-section transmission electron...
| Những tác giả chính: | , , , , , |
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| Định dạng: | Journal article |
| Ngôn ngữ: | English |
| Được phát hành: |
2000
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