NEW RESULTS AND AN INTERPRETATION FOR SEM EBIC CONTRAST ARISING FROM INDIVIDUAL DISLOCATIONS IN SILICON.
The SEM EBIC contrast for individual screw and 60 degree dislocations formed in high-purity, n-type 10**1**5 cm** minus **3 silicon by deformation has been measured and found to vary with both specimen temperature and electron beam current. A new theory of recombination at dislocations has been deve...
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| Format: | Conference item |
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1985
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| _version_ | 1797077932793921536 |
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| author | Wilshaw, P Booker, G |
| author_facet | Wilshaw, P Booker, G |
| author_sort | Wilshaw, P |
| collection | OXFORD |
| description | The SEM EBIC contrast for individual screw and 60 degree dislocations formed in high-purity, n-type 10**1**5 cm** minus **3 silicon by deformation has been measured and found to vary with both specimen temperature and electron beam current. A new theory of recombination at dislocations has been developed and applied to the EBIC method. The new theory explains the experimental results and enables parameters associated with the recombination process at the individual dislocations, e. g. energy level, density of states, etc. , to be deduced. |
| first_indexed | 2024-03-07T00:25:08Z |
| format | Conference item |
| id | oxford-uuid:7de329d4-6ec9-4859-bfe2-8d21b5636156 |
| institution | University of Oxford |
| last_indexed | 2024-03-07T00:25:08Z |
| publishDate | 1985 |
| record_format | dspace |
| spelling | oxford-uuid:7de329d4-6ec9-4859-bfe2-8d21b56361562022-03-26T21:06:33ZNEW RESULTS AND AN INTERPRETATION FOR SEM EBIC CONTRAST ARISING FROM INDIVIDUAL DISLOCATIONS IN SILICON.Conference itemhttp://purl.org/coar/resource_type/c_5794uuid:7de329d4-6ec9-4859-bfe2-8d21b5636156Symplectic Elements at Oxford1985Wilshaw, PBooker, GThe SEM EBIC contrast for individual screw and 60 degree dislocations formed in high-purity, n-type 10**1**5 cm** minus **3 silicon by deformation has been measured and found to vary with both specimen temperature and electron beam current. A new theory of recombination at dislocations has been developed and applied to the EBIC method. The new theory explains the experimental results and enables parameters associated with the recombination process at the individual dislocations, e. g. energy level, density of states, etc. , to be deduced. |
| spellingShingle | Wilshaw, P Booker, G NEW RESULTS AND AN INTERPRETATION FOR SEM EBIC CONTRAST ARISING FROM INDIVIDUAL DISLOCATIONS IN SILICON. |
| title | NEW RESULTS AND AN INTERPRETATION FOR SEM EBIC CONTRAST ARISING FROM INDIVIDUAL DISLOCATIONS IN SILICON. |
| title_full | NEW RESULTS AND AN INTERPRETATION FOR SEM EBIC CONTRAST ARISING FROM INDIVIDUAL DISLOCATIONS IN SILICON. |
| title_fullStr | NEW RESULTS AND AN INTERPRETATION FOR SEM EBIC CONTRAST ARISING FROM INDIVIDUAL DISLOCATIONS IN SILICON. |
| title_full_unstemmed | NEW RESULTS AND AN INTERPRETATION FOR SEM EBIC CONTRAST ARISING FROM INDIVIDUAL DISLOCATIONS IN SILICON. |
| title_short | NEW RESULTS AND AN INTERPRETATION FOR SEM EBIC CONTRAST ARISING FROM INDIVIDUAL DISLOCATIONS IN SILICON. |
| title_sort | new results and an interpretation for sem ebic contrast arising from individual dislocations in silicon |
| work_keys_str_mv | AT wilshawp newresultsandaninterpretationforsemebiccontrastarisingfromindividualdislocationsinsilicon AT bookerg newresultsandaninterpretationforsemebiccontrastarisingfromindividualdislocationsinsilicon |