NEW RESULTS AND AN INTERPRETATION FOR SEM EBIC CONTRAST ARISING FROM INDIVIDUAL DISLOCATIONS IN SILICON.
The SEM EBIC contrast for individual screw and 60 degree dislocations formed in high-purity, n-type 10**1**5 cm** minus **3 silicon by deformation has been measured and found to vary with both specimen temperature and electron beam current. A new theory of recombination at dislocations has been deve...
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| Format: | Conference item |
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1985
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