NEW RESULTS AND AN INTERPRETATION FOR SEM EBIC CONTRAST ARISING FROM INDIVIDUAL DISLOCATIONS IN SILICON.

NEW RESULTS AND AN INTERPRETATION FOR SEM EBIC CONTRAST ARISING FROM INDIVIDUAL DISLOCATIONS IN SILICON.

The SEM EBIC contrast for individual screw and 60 degree dislocations formed in high-purity, n-type 10**1**5 cm** minus **3 silicon by deformation has been measured and found to vary with both specimen temperature and electron beam current. A new theory of recombination at dislocations has been deve...

Cur síos iomlán

Sonraí bibleagrafaíochta
Príomhchruthaitheoirí:	Wilshaw, P, Booker, G
Formáid:	Conference item
Foilsithe / Cruthaithe:	1985

Míreanna comhchosúla

DISLOCATION RECOMBINATION THEORY FOR SILICON AND INTERPRETATION OF EBIC CONTRAST IN TERMS OF FUNDAMENTAL DISLOCATION PARAMETERS.
de réir: Wilshaw, P, et al.
Foilsithe / Cruthaithe: (1986)

TEMPERATURE DEPENDENCE OF EBIC CONTRAST FROM INDIVIDUAL DISLOCATIONS IN SILICON.
de réir: Ourmazd, A, et al.
Foilsithe / Cruthaithe: (1983)

THE TEMPERATURE-DEPENDENCE OF EBIC CONTRAST FROM INDIVIDUAL DISLOCATIONS IN SILICON
de réir: Ourmazd, A, et al.
Foilsithe / Cruthaithe: (1983)

An SEM EBIC study of the electronic properties of dislocations in silicon
de réir: Wilshaw, P, et al.
Foilsithe / Cruthaithe: (1984)

MEASUREMENT OF CONTRAST FROM INDIVIDUAL DISLOCATIONS BY LOCK-IN EBIC
de réir: Ourmazd, A, et al.
Foilsithe / Cruthaithe: (1982)

EBIC INVESTIGATIONS OF DISLOCATIONS AND THEIR INTERACTIONS WITH IMPURITIES IN SILICON
de réir: Fell, T, et al.
Foilsithe / Cruthaithe: (1993)

SOME ASPECTS OF THE MEASUREMENTS OF ELECTRICAL EFFECTS OF DISLOCATIONS IN SILICON USING A COMPUTERIZED EBIC SYSTEM
de réir: Wilshaw, P, et al.
Foilsithe / Cruthaithe: (1983)

SOME ASPECTS OF THE MEASUREMENTS OF ELECTRICAL EFFECTS OF DISLOCATION IN SILICON USING A COMPUTERISED EBIC SYSTEM.
de réir: Wilshaw, P, et al.
Foilsithe / Cruthaithe: (1983)

QUANTITATIVE EBIC INVESTIGATIONS OF DEFORMATION-INDUCED AND COPPER DECORATED DISLOCATIONS IN SILICON
de réir: Fell, T, et al.
Foilsithe / Cruthaithe: (1991)

QUANTITATIVE EBIC INVESTIGATIONS OF DEFORMATION-INDUCED AND COPPER DECORATED DISLOCATIONS IN SILICON
de réir: Fell, T, et al.
Foilsithe / Cruthaithe: (1991)

EBIC CONTRAST OF DEFECTS IN SEMICONDUCTORS
de réir: Wilshaw, P, et al.
Foilsithe / Cruthaithe: (1991)

AN EBIC INVESTIGATION OF ALPHA, BETA AND SCREW DISLOCATIONS IN GALLIUM-ARSENIDE
de réir: Galloway, S, et al.
Foilsithe / Cruthaithe: (1993)

ELECTRICAL BEHAVIOUR OF INDIVIDUAL DISLOCATIONS, SHOCKLEY PARTIALS AND STACKING FAULT RIBBONS IN SILICON.
de réir: Ourmazd, A, et al.
Foilsithe / Cruthaithe: (1982)

THE ELECTRICAL BEHAVIOR OF INDIVIDUAL DISLOCATIONS, SHOCKLEY PARTIALS AND STACKING-FAULT RIBBONS IN SILICON
de réir: Ourmazd, A, et al.
Foilsithe / Cruthaithe: (1983)

RECOMBINATION AT DISLOCATIONS IN SILICON AND GALLIUM-ARSENIDE
de réir: Wilshaw, P, et al.
Foilsithe / Cruthaithe: (1989)

COMBINED APPLICATION OF SEM-CL AND SEM-EBIC FOR THE INVESTIGATION OF COMPOUND SEMICONDUCTORS
de réir: Schreiber, J, et al.
Foilsithe / Cruthaithe: (1989)

SEM imaging of contrast arising from different doping concentrations in semiconductors
de réir: Sealy, C, et al.
Foilsithe / Cruthaithe: (1995)

ON THE FORMATION OF BRIGHT EBIC CONTRASTS AT CRYSTAL DEFECTS
de réir: Blumtritt, H, et al.
Foilsithe / Cruthaithe: (1989)

Simulation, modeling and parameter extraction studies in EBIC mode of SEM
de réir: Tan, Chee Chin
Foilsithe / Cruthaithe: (2014)

THE EXPERIMENTAL REQUIREMENTS FOR QUANTITATIVE MEASUREMENT OF CARRIER RECOMBINATION AT DEFECTS IN SEMICONDUCTORS USING THE EBIC TECHNIQUE
de réir: Wilshaw, P
Foilsithe / Cruthaithe: (1989)

A comparison between the use of EBIC and IBIC microscopy for semiconductor defect analysis
de réir: Breese, M, et al.
Foilsithe / Cruthaithe: (1998)

THE ELECTRONIC-PROPERTIES OF DISLOCATIONS IN SILICON
de réir: Wilshaw, P, et al.
Foilsithe / Cruthaithe: (1989)

THE ELECTRONIC-PROPERTIES OF DISLOCATIONS IN SILICON
de réir: Wilshaw, P, et al.
Foilsithe / Cruthaithe: (1989)

RECOMBINATION AT DISLOCATIONS IN THE DEPLETION REGION IN SILICON
de réir: Fell, T, et al.
Foilsithe / Cruthaithe: (1989)

RECOMBINATION AT DISLOCATIONS IN THE DEPLETION REGION IN SILICON
de réir: Fell, T, et al.
Foilsithe / Cruthaithe: (1989)

Understanding and optimising EBIC pn-junction characterisation from modelling insights
de réir: Zhou, R, et al.
Foilsithe / Cruthaithe: (2020)

ELECTRICAL BEHAVIOUR OF INDIVIDUAL DISLOCATIONS, SHOCKLEY PARTIALS AND STACKING FAULTS.
de réir: Ourmazd, A, et al.
Foilsithe / Cruthaithe: (1982)

On the locking of dislocations by oxygen in silicon
de réir: Senkader, S, et al.
Foilsithe / Cruthaithe: (2001)

Impurity locking of dislocations in silicon
de réir: Giannattasio, A, et al.
Foilsithe / Cruthaithe: (2004)

The role of prismatic dislocation loops in the generation of glide dislocations in Cz-silicon
de réir: Giannattasio, A, et al.
Foilsithe / Cruthaithe: (2004)

The segregation behaviour of oxygen at dislocations in silicon
de réir: Senkader, S, et al.
Foilsithe / Cruthaithe: (1999)

Locking of dislocations by oxygen in Cz-silicon
de réir: Senkader, S, et al.
Foilsithe / Cruthaithe: (1999)

Device parameters characterization with the use of EBIC
de réir: Oka Kurniawan
Foilsithe / Cruthaithe: (2010)

Generation of dislocation glide loops in Czochralski silicon
de réir: Giannattasio, A, et al.
Foilsithe / Cruthaithe: (2002)

Dislocation locking by nitrogen impurities in FZ-silicon
de réir: Giannattasio, A, et al.
Foilsithe / Cruthaithe: (2003)

Dislocation locking by oxygen in silicon: New insights to oxygen diffusion at low temperatures
de réir: Senkader, S, et al.
Foilsithe / Cruthaithe: (2002)

Mechanism for secondary electron dopant contrast in the SEM
de réir: Sealy, C, et al.
Foilsithe / Cruthaithe: (2000)

Oxygen-dislocation interactions in silicon at temperatures below 700 degrees C: Dislocation locking and oxygen diffusion
de réir: Senkader, S, et al.
Foilsithe / Cruthaithe: (2001)

Chemical etching to dissolve dislocation cores in multicrystalline silicon
de réir: Gregori, N, et al.
Foilsithe / Cruthaithe: (2012)

Chemical etching to dissolve dislocation cores in multicrystalline silicon
de réir: Gregori, N, et al.
Foilsithe / Cruthaithe: (2012)