NEW RESULTS AND AN INTERPRETATION FOR SEM EBIC CONTRAST ARISING FROM INDIVIDUAL DISLOCATIONS IN SILICON.

相似书籍

• DISLOCATION RECOMBINATION THEORY FOR SILICON AND INTERPRETATION OF EBIC CONTRAST IN TERMS OF FUNDAMENTAL DISLOCATION PARAMETERS.
  由: Wilshaw, P, et al.
  出版: (1986)
• TEMPERATURE DEPENDENCE OF EBIC CONTRAST FROM INDIVIDUAL DISLOCATIONS IN SILICON.
  由: Ourmazd, A, et al.
  出版: (1983)
• THE TEMPERATURE-DEPENDENCE OF EBIC CONTRAST FROM INDIVIDUAL DISLOCATIONS IN SILICON
  由: Ourmazd, A, et al.
  出版: (1983)
• An SEM EBIC study of the electronic properties of dislocations in silicon
  由: Wilshaw, P, et al.
  出版: (1984)
• MEASUREMENT OF CONTRAST FROM INDIVIDUAL DISLOCATIONS BY LOCK-IN EBIC
  由: Ourmazd, A, et al.
  出版: (1982)